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Toshiba Type P-Channel MOSFET, 8 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode, TO-252 TJ8S06M3L

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Toshiba Type P-Channel MOSFET, 8 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode, TO-252 TJ8S06M3L

Name: Toshiba Type P-Channel MOSFET, 8 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode, TO-252 TJ8S06M3L
Brand: Toshiba
SKU: 318566
Price: 1.01 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	2.3mm
Length	6.5mm
Model	TJ8S06M3L
Width	7mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	8A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	130mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	27W
Typical Gate Charge Qg @ Vgs	19nC
Maximum Gate Source Voltage Vgs	-20, +10V
Forward Voltage Vf	1.2V

Key Features

Supports a maximum continuous drain current of 8 A.
Maximum drain-source voltage of 60 V ensures reliable operation.
Featuring enhancement channel mode for efficient switching.
Low drain-source on-resistance of approximately 80 mΩ at VGS = -10 V.
Low leakage current with maximum IDSS of -10 μA at VDS = -60 V.
Robust maximum power dissipation rating of 27 W.
Wide operating temperature range from -55°C to 175°C.
Surface mount device in a TO-252 package with 3 pins.

Product Description

Toshiba TJ8S06M3L is a Type P-Channel MOSFET designed for high efficiency and performance in electronic circuits. It supports a maximum continuous drain current of 8 A and a maximum drain-source voltage of 60 V, making it suitable for automotive, motor drivers, DC-DC converters, and switching voltage regulators.

Featuring an enhancement channel mode, it operates with a threshold voltage Vth between -2.0 to -3.0 V ensuring stable switching characteristics. The device is packaged in a compact TO-252 surface mount package with three pins, making it suitable for space-constrained applications.

Its low on-resistance RDS(ON) of typically 80 mΩ at VGS = -10 V minimizes power losses while maintaining high efficiency. The MOSFET also exhibits very low leakage current of IDSS = -10 μA (max) at VDS = -60 V, contributing to reduced standby power consumption.

The gate charge is typically 19 nC which allows fast switching speeds, essential for power management circuits. Further robustness is provided by its maximum power dissipation rating of 27 W and wide operating temperature range of -55°C to 175°C. The maximum gate-source voltage rating is -20 V to +10 V, ensuring reliable gate drive capability.

This device complies with the automotive AEC-Q101 standard, signifying its suitability for automotive and harsh environment applications. Manufactured in Japan, Toshiba ensures high quality and reliability. Its dimensions are compact: length 6.5 mm, width 7 mm, and height 2.3 mm.

Supports automotive, motor drivers, DC-DC converters, and voltage regulator applications. Compact 3-pin TO-252 surface mount package. Designed for efficient power switching with low losses. Enhanced durability and wide temperature operating range.

Compliance with automotive AEC-Q101 standard ensures stringent quality. Explore more high-quality semiconductor components and discrete MOSFETs in the Electronics & Electricals category on EnvMart for diverse industrial and automotive solutions.