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Infineon OptiMOS 5 Power MOSFET N-Channel, 100 A, 25 V, Enhancement Mode, 8-Pin SuperSO8 Package BSC009NE2LS5IATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC009NE2LS5IATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, JESD22, JEDEC J-STD20, IEC61249-2-21 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 620mV |
Key Features
- OptiMOS 5 series with enhanced power efficiency and performance.
- Surface mount type suitable for compact electronic assemblies.
- Low on-resistance of 0.95 milliohms ensuring minimal power loss.
- Capable of dissipating maximum power of 74 watts.
- Operating temperature range from -55°C to 150°C for robust applications.
- Typical gate charge of 17 nanocoulombs enhances switching speeds.
- Maximum gate-source voltage rating of 16 volts for stability.
- Compact SuperSO8 package dimensions of 5.49 mm length, 6.35 mm width, and 1.1 mm height.
Product Description
Infineon BSC009NE2LS5IATMA1 is a high-performance OptiMOS 5 N-Channel Power MOSFET designed for efficient power management in electronic circuits. It delivers a maximum continuous drain current of 100 amperes and supports a maximum drain-source voltage of 25 volts. Its enhancement mode channel and low on-resistance of 0.95 milliohms provide excellent conduction efficiency, making it suitable for power-sensitive and high-current applications.
The device is housed in a compact and surface-mountable 8-Pin SuperSO8 package measuring 5.49 mm by 6.35 mm, with a height of 1.1 mm, allowing for space-saving PCB designs. It operates reliably over a broad temperature range from -55°C to 150°C, supporting demanding industrial and automotive applications that require high temperature tolerance and stability.
This MOSFET features a typical gate charge of 17 nC at Vgs and can withstand a gate-source voltage of up to 16 V, enabling quick switching with reduced losses. Rated for maximum power dissipation of 74 watts, the device ensures long-lasting performance under heavy load conditions.
The product is manufactured under strict quality standards, compliant with RoHS directives and industry standards such as JESD22, JEDEC J-STD20, and IEC61249-2-21, ensuring environmental compliance and reliability.
Ideal for power management in industrial electronics, power supplies, motor drives, and other applications requiring effective current handling and thermal management. This MOSFET supports design innovation by balancing power density with cost-effectiveness.
OptiMOS 5 family delivers enhanced power density and efficiency. Surface mount 8-pin SuperSO8 package supports compact circuit integration. Low on-resistance reduces conduction losses significantly. Wide operating temperature range ensures suitability in harsh environments.
RoHS and industry standards certified for quality assurance. Explore more Infineon power semiconductors and enhance your electronic designs with innovative, reliable components available at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 amperes.
This MOSFET supports a maximum drain-source voltage of 25 volts.
It has a low on-resistance of 0.95 milliohms, ensuring minimal power loss during operation.
The typical gate charge at Vgs is 17 nanocoulombs, which enhances switching speeds.
The SuperSO8 package dimensions are 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
It operates reliably in a temperature range from -55°C to 150°C.
This model can dissipate a maximum power of 74 watts.
It complies with RoHS directives and industry standards such as JESD22, JEDEC J-STD20, and IEC61249-2-21.
This device features an N-channel enhancement mode channel.
The maximum gate-source voltage rating for this model is 16 volts.
It is designed for surface mounting, making it suitable for compact electronic assemblies.
This model has a pin count of 8.
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