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Infineon OptiMOS N-Channel MOSFET 1.5 A 20 V Enhancement 3-Pin SC-70 BSS214NH6327XTSA1

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Infineon OptiMOS N-Channel MOSFET 1.5 A 20 V Enhancement 3-Pin SC-70 BSS214NH6327XTSA1

Name: Infineon OptiMOS N-Channel MOSFET 1.5 A 20 V Enhancement 3-Pin SC-70 BSS214NH6327XTSA1
Brand: Infineon
SKU: 133795
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	800μm
Length	2mm
Model	BSS214NH6327XTSA1
Width	1.25mm
Mount Type	Surface
Series	OptiMOS
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	1.5A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	250mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	0.8nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	800mV

Key Features

Features a low 250 mΩ drain-source resistance to reduce conduction losses.
Supports moderate load currents with a maximum continuous drain current of 1.5 A.
Maximum drain-source voltage rated at 20 V suitable for low-voltage power stages.
Typical gate charge of 0.8 nC enables fast switching transitions.
Maximum power dissipation of 500 mW ensures efficient thermal management.
Compatible maximum gate-source voltage of ±12 V protects gate integrity.
Compact SC-70 package supports dense PCB layouts and automated assembly.
Operating temperature range from -55°C to 150°C ensures stability in harsh environments.

Product Description

Infineon BSS214NH6327XTSA1 is an OptiMOS N-Channel MOSFET designed for power management and signal switching in industrial, automotive, and low-voltage electronic applications. It features a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 20 V, operating in enhancement mode within a compact 3-pin SC-70 surface-mount package.

This MOSFET delivers low conduction losses through its 250 mΩ drain-source resistance and supports fast switching with a typical gate charge of 0.8 nC. It manages thermal loads efficiently with a maximum power dissipation rating of 500 mW, allowing compact designs with effective heat handling.

The device withstands a wide operating temperature range from -55°C to 150°C, suitable for demanding industrial and automotive environments. The ±12 V maximum gate-source voltage provides compatibility with common gate drive levels, protecting the gate oxide from damage.

Its SC-70 package facilitates dense PCB population and automated pick-and-place assembly, making it ideal for compact power solutions. This component complies with the automotive standard AEC-Q101, ensuring quality and reliability for use in automotive electronics.

Typical applications include DC-DC converter low-side switching, power distribution in automotive electronics, gate driver circuits requiring rapid switching response, load switching on compact PCBs, and power management for battery-powered devices.

Low 250 mΩ drain-source resistance reduces conduction losses. Maximum drain current of 1.5 A supports moderate loads. 20 V maximum drain-source voltage fits low-voltage power stages. Low gate charge of 0.8 nC supports fast switching.

Maximum power dissipation of 500 mW for thermal control. Maximum gate-source voltage ±12 V safeguards gate oxide. Compact SC-70 surface-mount package for dense layouts. Wide temperature range -55°C to 150°C for harsh environments.

Compliance with AEC-Q101 automotive standard ensures reliability. Explore more semiconductor components and MOSFETs at EnvMart for your industrial, automotive, and electronic component needs.