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DiodesZetex N-Channel MOSFET, Enhancement Mode, 68.8 A, 100 V, 4-Pin TO-252 DMT10H010LK3-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.29mm |
| Length | 6.58mm |
| Model | DMT10H010LK3-13 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | DMT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 68.8A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 11.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 53.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features a maximum continuous drain current of 68.8 amperes.
- It supports a drain-source voltage up to 100 volts.
- The device package is a compact 4-pin TO-252 surface mount type.
- Maximum power dissipation is 62.5 watts suitable for high power applications.
- The device operates within a temperature range from -55°C to 175°C.
- The maximum drain-source resistance (Rds) is 11.3 milliohms, allowing low conduction losses.
- Typical gate charge at Vgs is 53.7 nanocoulombs, facilitating fast switching.
- Maximum gate-source voltage is rated at 20 volts for safe gate operation.
Product Description
DiodesZetex presents the DMT10H010LK3-13, a high-performance N-Channel MOSFET designed for enhancement mode operation with stringent electrical and thermal specifications. This device supports a maximum continuous drain current of 68.8A and a drain-source voltage rating of 100V, making it highly suitable for power management circuits in industrial and commercial electronic applications.
Encapsulated in a 4-pin TO-252 package, the MOSFET is optimized for surface mount technology and offers efficient thermal dissipation capabilities with a maximum power dissipation rating of 62.5W. Its construction supports operation within an extended temperature range from -55°C to 175°C, ensuring reliable performance in harsh environments such as industrial machinery, automotive electronics, and power supply systems.
Key electrical characteristics include a low maximum drain-source resistance of 11.3 milliohms, which reduces power loss and improves efficiency. The typical gate charge of 53.7 nanocoulombs facilitates rapid switching speeds essential for high-frequency applications. The maximum gate-source voltage rating of 20V protects the gate oxide from damage and maintains device integrity.
Physically, the MOSFET measures 6.58 mm in length, 6.1 mm in width, and 2.29 mm in height, enabling compact board layouts and integration in space-limited systems. Its forward voltage of 1.3V contributes to optimized conduction efficiency in power stages.
This device is ideal for industrial and commercial use in power switching, motor control, DC-DC converters, and other electronic circuits requiring robust N-Channel MOSFETs. Maximum continuous drain current: 68.8 A. Drain-source voltage rating: 100 V.
Surface mount 4-pin TO-252 package. Maximum power dissipation: 62.5 W. Operating temperature: -55°C to 175°C. Maximum drain-source resistance: 11.3 mΩ. Typical gate charge at Vgs: 53.7 nC. Maximum gate-source voltage: 20 V.
Forward voltage: 1.3 V. Compact dimensions for efficient PCB design. Explore more power semiconductor devices and electronic components at EnvMart for advanced industrial, construction, and electronic manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 68.8 amperes.
This model supports a drain-source voltage rating of up to 100 volts.
It is encapsulated in a 4-pin TO-252 surface mount package.
The maximum power dissipation for this MOSFET is rated at 62.5 watts.
This device operates within a temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds) is 11.3 milliohms.
The typical gate charge at Vgs is 53.7 nanocoulombs.
The maximum gate-source voltage is rated at 20 volts.
The dimensions of this model are 6.58 mm in length, 6.1 mm in width, and 2.29 mm in height.
The forward voltage of this MOSFET is 1.3 volts.
This device utilizes an N-channel configuration.
It is suitable for power switching, motor control, and DC-DC converters in industrial and commercial electronic applications.
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