Toshiba U-MOSVIII-H N-Channel MOSFET 22 A 80 V Enhancement Mode 8-Pin TSON TPN30008NH,LQ(S

Toshiba TPN30008NH,LQ(S is a high-performance U-MOSVIII-H Series N-Channel MOSFET optimized for power switching applications requiring continuous drain current of 22 A and drain-source voltage capability of 80 V. It comes in a compact 8-pin TSON surface mount package suitable for dense PCB layouts.

This enhancement-mode device features a low maximum drain-source resistance of 30 milliohm, which helps minimize conduction losses and increases overall circuit efficiency. The maximum gate-source voltage rating of -20 to +20 V permits reliable gate control under diverse operating conditions.

Typical gate charge is low at 11 nC, enabling fast switching speeds essential for high-frequency converters and power management circuits. The MOSFET can dissipate up to 27 W of power and withstand operating temperatures up to 150°C, making it suitable for demanding industrial, automotive, and consumer electronic applications.

The physical dimensions of 3.1 mm length and width by 850 μm height facilitate compact integration on printed circuit boards. This MOSFET is designed primarily for surface mount technology, improving assembly efficiency and reliability.

Enhancement mode N-Channel MOSFET for high-efficiency switching. Supports continuous drain current up to 22 A. Maximum drain-source voltage rating of 80 V. Low drain-source resistance improves power efficiency. Compact TSON 8-pin package suitable for surface mounting.

Operating temperature range supports up to 150°C. Low typical gate charge enables high-speed switching. Maximum power dissipation rated at 27 W.

This Toshiba MOSFET is ideal for use in industrial power supplies, automotive electronics, consumer devices, and other applications requiring reliable power switching and efficiency. Explore further offerings in discrete semiconductors and MOSFETs on EnvMart for comprehensive electronics component procurement.