Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Surface Mount SSM3J356R,LF(T

Toshiba SSM3J356R,LF(T is a Type P-Channel MOSFET designed for power management and switching applications, offering a continuous drain current of 2 A and a maximum drain-source voltage rating of 60 V in a compact 3-pin SOT-23 surface mount package.

This MOSFET ensures efficient power dissipation with its 2 W rating and provides robust operation over a wide temperature range from -55°C to 150°C, suitable for industrial, automotive, and commercial electronic equipment.

Key electrical characteristics such as a maximum drain-source resistance of 400 mΩ and a typical gate charge of 8.3 nC enable fast switching and reduced losses in power circuits. The device’s small footprint with precise dimensions (2.4 mm length, 2.9 mm width, 800 µm height) makes it suitable for high density PCB layouts and compact electronic designs.

Its maximum gate-source voltage rating of -20 V and a forward voltage of 900 mV ensure reliable gate control and conduction characteristics. Supports maximum continuous drain current of 2 A. Voltage rating of 60 V drain-source maximum.

SOT-23 package with surface mount type. Operates within -55 to 150 °C temperature range. Max drain-source resistance of 400 mΩ. Typical gate charge 8.3 nC at Vgs threshold. Max power dissipation of 2 W. Forward voltage of 900 mV.

Compact dimensions: length 2.4 mm, width 2.9 mm, height 800 μm.

This MOSFET is ideal for use in industrial and electronic power management, automotive circuits, communication devices, and general semiconductor applications requiring reliable switching performance in a small form factor.

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