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Infineon IPD N-Channel MOSFET 180A 40V 3-Pin TO-252 Surface Mount IPD80R280P7ATMA1

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Infineon IPD N-Channel MOSFET 180A 40V 3-Pin TO-252 Surface Mount IPD80R280P7ATMA1

Name: Infineon IPD N-Channel MOSFET 180A 40V 3-Pin TO-252 Surface Mount IPD80R280P7ATMA1
Brand: Infineon
SKU: 300673
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPD80R280P7ATMA1
Mount Type	Surface
Series	IPD
Maximum Operating Temperature	+150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.2mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

This MOSFET features a low drain-source resistance of 1.2 milliohms for efficient conduction.
It supports up to 81W power dissipation, enabling sustained high-power operation.
The device operates in a wide temperature range from -55°C to +150°C for harsh environments.
The typical gate charge is 80 nanocoulombs, allowing rapid switching performance.
The intrinsic body diode has a forward voltage of 0.9 volts, important for reverse conduction behavior.
It complies with RoHS and meets automotive AEC-Q101 standards, suitable for automotive applications.
Designed for surface mounting on PCBs, it requires proper thermal management and solder-pad design.
Applications include automotive power distribution, DC-DC converters, motor-drive stages, and high-current power management circuits.

Product Description

Infineon IPD80R280P7ATMA1 is a power N-channel MOSFET designed for high-current switching applications in surface-mounted configurations. It provides a maximum drain-source voltage of 40V and supports a continuous drain current of 180A, making it suitable for demanding industrial and automotive electronic power stages.

This device offers very low conduction losses with its 1.2 milliohms maximum drain-source resistance, and an 81 watt power dissipation rating ensures reliable operation under high load conditions. The internal body diode with a forward voltage of 0.9V assists in managing recirculating currents efficiently.

The MOSFET operates reliably across a broad temperature range from -55°C to +150°C, meeting requirements for harsh environmental conditions. It is packaged in a TO-252 package optimized for surface mounting on printed circuit boards, requiring thoughtful PCB layout and thermal management.

Compliant with RoHS directives and qualified to the automotive AEC-Q101 standard, this component is ideal for automotive power distribution modules, DC-DC converters, motor driver circuits, and power management load switching. Its rapid switching capability is ensured by a typical gate charge of 80nC at rated gate voltage.

Low Rds(on) of 1.2 milliohms reduces conduction losses. High continuous drain current rating of 180A supports heavy load currents. Wide operating temperature range from -55°C to +150°C suits harsh environments. TO-252 surface mount package ensures compact PCB integration.

Forward voltage of intrinsic body diode at 0.9V improves switching efficiency. Complies with RoHS and automotive AEC-Q101 standards. Supports automotive and industrial power stage applications. Typical gate charge of 80nC facilitates rapid and efficient switching.

This high-performance MOSFET from Infineon enhances reliability and efficiency in power electronics designs requiring robust switching and thermal endurance. EnvMart offers detailed product specifications and industrial-grade solutions suitable for advanced electronics manufacturing.