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Infineon N-Channel MOSFET 180 A Continuous Drain Current 40 V TO-252 Surface Mount 3-Pin IPD65R225C7ATMA1

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Infineon N-Channel MOSFET 180 A Continuous Drain Current 40 V TO-252 Surface Mount 3-Pin IPD65R225C7ATMA1

Name: Infineon N-Channel MOSFET 180 A Continuous Drain Current 40 V TO-252 Surface Mount 3-Pin IPD65R225C7ATMA1
Brand: Infineon
SKU: 300581
Price: 2.96 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPD65R225C7ATMA1
Mount Type	Surface
Series	IPD
Maximum Operating Temperature	+150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.2mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

Supports maximum continuous drain current of 180 A for high-current switching applications.
Features a maximum drain-source voltage rating of 40 V suitable for medium-voltage circuits.
Low on-resistance of 1.2 milliohms minimizes conduction losses.
Typical gate charge of 80 nanocoulombs ensures efficient and predictable switching.
Maximum power dissipation of 81 W enables sustained operation under load.
Operates reliably across a temperature range from -55°C to +150°C.
Complies with AEC-Q101 automotive qualification standard for high reliability.
Packaged in a compact TO-252 surface-mount format with 3 pins for easy PCB assembly.

Product Description

Infineon IPD65R225C7ATMA1 N-Channel MOSFET is engineered for industrial, automotive, and high-power electronic applications requiring reliable surface-mount power switching components. This MOSFET supports a maximum continuous drain current of 180 amps and a maximum drain-source voltage of 40 volts, making it ideal for medium-voltage and high-current circuits.

The device achieves a low drain-source resistance (Rds(on)) of only 1.2 milliohms, reducing energy loss and improving switching efficiency. With a typical gate charge of 80 nanocoulombs at a gate-source voltage of 8 V, it provides predictable and efficient gate drive characteristics, enhancing overall circuit performance.

This MOSFET is housed in a TO-252 package that facilitates surface mounting on PCBs, providing compact, reliable assembly with 3-pin connectivity. It can operate under severe thermal conditions, with a temperature rating from -55°C up to +150°C, meeting the stringent requirements of automotive and industrial environments.

Classified under the Infineon IPD series, the component complies with RoHS environmental directives and meets AEC-Q101 automotive standards, certifying its suitability for high-reliability automotive power distribution modules, battery management systems, DC motor drives, and industrial power converters.

Supports 40 V maximum drain-source voltage for medium-voltage applications. 180 A continuous drain current supports high-current switching needs. 1.2 mΩ Rds(on) reduces conduction losses and improves efficiency. 81 W maximum power dissipation allows reliable load handling.

80 nC gate charge ensures efficient and repeatable switching behavior. Temperature operation range from -55°C to +150°C. AEC-Q101 qualified for automotive and industrial use. TO-252 3-pin surface mount package for easy PCB assembly.

RoHS compliant supporting environmentally safe product design.

Applications include automotive power distribution modules, electric vehicle battery management systems, high-current motor drive stages, and industrial power conversion systems. This MOSFET’s performance characteristics and compact form factor make it an excellent choice for demanding electronic designs.

Explore the Infineon range within the Electronics & Electricals category on EnvMart for high-quality semiconductor solutions tailored to industrial and automotive applications.

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Frequently Asked Questions

The maximum continuous drain current for this model is 180 A, making it suitable for high-current switching applications.

This MOSFET has a maximum drain-source voltage rating of 40 V, which is appropriate for medium-voltage circuits.

The on-resistance (Rds(on)) of this unit is 1.2 milliohms, which helps minimize conduction losses.

The typical gate charge for this MOSFET is 80 nanocoulombs, ensuring efficient and predictable switching.

It has a maximum power dissipation of 81 W, allowing for sustained operation under load.

This model can operate reliably across a temperature range from -55°C to +150°C.

It is packaged in a TO-252 surface-mount format with 3 pins for easy PCB assembly.

Yes, it complies with the AEC-Q101 automotive qualification standard, ensuring high reliability for automotive applications.

This model is suitable for automotive power distribution modules, electric vehicle battery management systems, high-current motor drive stages, and industrial power converters.

The maximum gate-source voltage (Vgs) for this unit is 20 V, allowing for safe operation within specified limits.