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Infineon MOSFET Type P-Channel, 180 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin TO-252 IPD650P06NMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD650P06NMATMA1 |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Continuous drain current rating of 180 A for robust power handling.
- Drain-source voltage of 100 V suitable for medium voltage applications.
- Low on-resistance of 0.7 milliohm reducing power losses.
- 3-Pin TO-252 surface mount package for compact PCB designs.
- Maximum power dissipation of 81 W for stable operation.
- Wide operating temperature range from -55°C to 175°C supports harsh environments.
- Enhanced mode P-Channel device with typical gate charge of 80 nC at 20 V gate voltage.
- Automotive standard AEC-Q101 qualified ensuring high reliability.
Product Description
The Infineon IPD650P06NMATMA1 is a P-Channel MOSFET designed for high power semiconductor applications. It features a continuous drain current rating of 180 A and a maximum drain-source voltage of 100 V, making it suitable for demanding power switching in industrial, automotive, and power management circuits.
Packaged in a compact TO-252 3-pin surface mount package, this device supports efficient heat dissipation and enables high-density PCB layouts. The MOSFET exhibits a very low drain-source resistance of only 0.7 milliohm, minimizing conduction losses and improving energy efficiency.
It operates reliably across a wide temperature range from -55°C to 175°C, which makes it ideal for automotive applications and harsh industrial environments. The device also complies with the stringent AEC-Q101 automotive standard and meets RoHS and halogen-free compliance.
With an enhancement mode and typical gate charge of 80 nC, the device allows for fast switching performance, enabling reduced switching losses and improved circuit efficiency. The maximum power dissipation is rated at 81 W, ensuring stable operation under high load.
Continuous drain current rating of 180 A. Drain-source voltage up to 100 V. Low on-resistance of 0.7 mΩ. Wide temperature range operation from -55°C to 175°C. Automotive grade AEC-Q101 qualification. Compact TO-252 3-pin surface mount package.
Typical gate charge of 80 nC enabling fast switching.
This Infineon MOSFET is suited for power management in automotive, industrial controls, and other high-reliability electronic systems. It supports applications requiring efficient and robust electronic switching components. Explore related semiconductor components and power MOSFETs in the Electronics & Electricals category on EnvMart for comprehensive solutions.
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Frequently Asked Questions
The continuous drain current rating of this MOSFET is 180 A, allowing for robust power handling in various applications.
The maximum drain-source voltage for this model is 100 V, making it suitable for medium voltage applications.
This P-Channel MOSFET has a low on-resistance of 0.7 milliohm, which helps reduce power losses during operation.
It operates reliably across a wide temperature range from -55°C to 175°C, suitable for harsh environments.
The maximum power dissipation for this MOSFET is rated at 81 W, ensuring stable operation under high load conditions.
The typical gate charge at 20 V for this model is 80 nC, allowing for fast switching performance.
This MOSFET is packaged in a compact TO-252 3-pin surface mount package, facilitating efficient PCB designs.
Yes, this model is AEC-Q101 qualified, ensuring high reliability for automotive applications.
This MOSFET has a 3-pin configuration, suitable for compact layouts, but specific dimensions are not provided in the available data.
The IPD650P06NMATMA1 complies with RoHS standards, ensuring it meets environmental regulations.
This model is suited for power management in automotive, industrial controls, and other high-reliability electronic systems.
The maximum gate-source voltage for this MOSFET is 20 V, which is critical for its operation.
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