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Infineon Power MOSFET N-Channel 400 A, 40 V, Surface Mount HSOF-8 Package IPT60R040S7XTMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPT60R040S7XTMA1 |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- High maximum continuous drain current of 400 A ensures robust conduction capability.
- Maximum drain-source voltage rating of 40 V supports high voltage applications.
- HSOF-8 package type allows for compact surface mounting on PCBs.
- Low maximum drain-source resistance of 1.2 milliohms reduces conduction losses.
- Maximum power dissipation capability of 81 W facilitates efficient thermal management.
- Operational temperature range from -55°C to 175°C supports harsh industrial environments.
- Maximum gate-source voltage of 20 V protects the device from gate overstress.
- Typical forward voltage drop of 1 V improves overall efficiency.
Product Description
The Infineon IPT60R040S7XTMA1 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. This device features a maximum continuous drain current of 400 A and a maximum drain-source voltage rating of 40 V, making it well suited for power management and switching in industrial and automotive electronics.
Packaged in the compact HSOF-8 surface mount format with 8 pins, the MOSFET offers excellent integration capabilities on printed circuit boards, suitable for high-density layouts. The device exhibits a low maximum drain-source resistance of 1.2 milliohms, minimizing conduction losses and improving energy efficiency in power circuits.
Thermal management is facilitated by the MOSFET's maximum power dissipation of 81 W and its ability to operate within a wide temperature range from -55°C to 175°C. This allows reliable operation in harsh environmental and industrial conditions. The gate of the MOSFET can tolerate voltages up to 20 V, protecting against electrical overstress.
Typical electrical characteristics include a forward voltage drop of 1 V and a typical gate charge of 80 nC at the rated gate-source voltage, enabling fast switching and reduced losses in high-frequency applications. The device is fully RoHS compliant, and meets the automotive quality standard AEC-Q101, ensuring superior reliability in automotive systems.
This power MOSFET finds applications in industrial power supplies, motor drives, automotive power management systems, telecommunications equipment, and other high-reliability electronic devices requiring efficient power switching and control.
High current rating and voltage handling for robust power applications. Low on-resistance and fast switching for energy-efficient operation. Compact surface mount package for versatile PCB integration. Wide operating temperature range supports use in demanding environments.
Compliance with industry standards for quality and environmental safety.
This model IPT60R040S7XTMA1 from Infineon is a key component for engineers seeking reliable power MOSFET solutions. Explore more Power MOSFET and semiconductor devices on EnvMart for your industrial electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPT60R040S7XTMA1 is 400 A.
This model has a maximum drain-source voltage rating of 40 V, suitable for high voltage applications.
The power MOSFET is packaged in a compact HSOF-8 surface mount format, allowing for efficient PCB integration.
It has a maximum power dissipation capability of 81 W, facilitating effective thermal management in applications.
The operational temperature range for the IPT60R040S7XTMA1 is from -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage for this MOSFET is 20 V, which helps protect the device from gate overstress.
The typical forward voltage drop for this model is 1 V, which contributes to its overall efficiency.
The maximum drain-source resistance is 1.2 milliohms, which helps reduce conduction losses.
It complies with the automotive quality standard AEC-Q101, ensuring reliability in automotive applications.
The typical gate charge at the rated gate-source voltage is 80 nC, enabling fast switching capabilities.
The Infineon IPT60R040S7XTMA1 has 8 pins, suitable for various electronic configurations.
The country of origin for this power MOSFET is India.
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