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Infineon N-Channel Power MOSFET 273A, 100V, 3-Pin TO-263 Surface Mount iPB020N08N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB020N08N5ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- High continuous drain current of 273 amperes for heavy-duty applications.
- Maximum drain-source voltage rated at 100 volts.
- Surface mount TO-263 package with 3 pins for easy PCB integration.
- Low drain-source resistance of 1.7 milliohms enhances efficiency.
- Typical gate charge of 80 nanocoulombs improves switching performance.
- Maximum power dissipation of 81 watts suits high-power circuits.
- Wide operating temperature range between -55°C and 175°C.
- Maximum gate-source voltage of 20 volts ensures robust control.
Product Description
Infineon IPB020N08N5ATMA1 is a high-performance N-Channel power MOSFET designed for demanding electronic applications requiring efficient high-frequency switching. This MOSFET features a maximum continuous drain current of 273 A and a drain-source voltage of 100 V, making it suitable for power management circuits, industrial electronics, and automotive electronics requiring reliable and robust switching devices.
Housed in a surface mount TO-263 package with 3 pins, the device allows streamlined PCB assembly and integration. Its low drain-source resistance of 1.7 milliohms minimizes conduction losses and enhances overall efficiency in power circuits. The typical gate charge of 80 nC enables fast switching, improving circuit performance and lowering heat generation.
The MOSFET supports a maximum power dissipation of 81 watts, capable of handling substantial power loads without compromising reliability. Operating temperature range spans from -55°C to 175°C, making it applicable in harsh industrial and automotive environments. A maximum gate-source voltage of 20 V provides electrical robustness, while a forward voltage of 1.1 V further contributes to efficient operation.
Designed with environmental considerations, the Infineon IPB020N08N5ATMA1 is RoHS compliant. Its features suit use in power supply circuits, motor drivers, automotive electronics, switching regulators, and industrial automation systems.
High continuous drain current of 273 A for high power applications. Maximum drain-source voltage of 100 V ensures voltage handling capability. Low on-resistance reduces power dissipation and heat generation. Fast switching with typical gate charge of 80 nC.
Robust TO-263 surface mount package with 3 pins. Wide -55°C to 175°C operating temperature range. High maximum power dissipation of 81 W. Compliance with RoHS environmental standards. Suitable for industrial, automotive, and power management uses.
Explore our Electronics & Electricals category for more discrete semiconductors and power MOSFETs to enhance your designs with reliable components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 273 amperes, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 100 volts, ensuring it can handle substantial voltage levels in applications.
It comes in a TO-263 surface mount package with 3 pins, which facilitates easy integration into PCB designs.
The typical gate charge for this model is 80 nanocoulombs, which enhances its switching performance.
This unit supports a maximum power dissipation of 81 watts, suitable for high-power circuits.
The operating temperature range for this MOSFET spans from -55°C to 175°C, allowing it to function in extreme environments.
The maximum gate-source voltage for this model is 20 volts, ensuring robust control in various applications.
It features a low drain-source resistance of 1.7 milliohms, which helps minimize conduction losses and enhances efficiency.
Yes, the Infineon IPB020N08N5ATMA1 is RoHS compliant, meeting environmental standards for hazardous substances.
This model is suitable for power management circuits, motor drivers, automotive electronics, and industrial automation systems.
The forward voltage for this model is 1.1 volts, contributing to its efficient operation in power circuits.
This device is an N-channel MOSFET, which is commonly used in various electronic applications for efficient switching.
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