Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon HEXFET Dual Type P, Type N-Channel MOSFET 4.7A -55V 8-Pin SOIC AUIRF7343QTR

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model AUIRF7343QTR
Mount Type Surface Mount
Series HEXFET
Maximum Operating Temperature 175°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 4.7A
Maximum Drain Source Voltage Vds -55V
Maximum Drain Source Resistance Rds 0.11mΩ
Maximum Power Dissipation Pd 2W
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Device uses advanced planar technology with ultra-low on-resistance of 0.11 mΩ.
  • Maximum power dissipation rating is 2 watts for effective thermal handling.
  • Operates within a wide temperature range from -55°C to 175°C, suitable for harsh environments.
  • Maximum gate-source voltage is 20 V ensuring robust switching performance.
  • Logic level gate drive compatible with low voltage control circuits.
  • Features dual N and P channel MOSFETs for flexible circuit design.
  • Supplied in tape and reel packaging optimized for automated assembly.
  • Lead-free and RoHS compliant, supporting environmentally friendly manufacturing.

Product Description

Infineon AUIRF7343QTR HEXFET Dual Type P, Type N-Channel MOSFET is engineered with advanced planar technology to achieve ultra-low on-resistance, making it optimal for power-efficient electronic designs. Packaged in an 8-pin SOIC surface mount format, this device features a maximum continuous drain current of 4.7 amperes and a maximum drain-source voltage of -55 volts, meeting the demands of contemporary automotive and industrial electronics.

This MOSFET supports a maximum power dissipation of 2 watts, allowing it to handle significant power loads with stable thermal performance. It operates reliably over a broad temperature range from -55°C to 175°C, suitable for harsh environmental conditions commonly encountered in automotive and industrial applications.

The device includes a maximum gate-source voltage rating of 20 volts and a forward voltage of -1.2 volts. Its logic level gate drive capability ensures direct compatibility with low voltage logic circuits, enabling efficient switching performance. The dual N and P channel construction allows more flexible designs where complementary MOSFET characteristics are beneficial.

Infineon's HEXFET AUIRF7343QTR is offered in lead-free, RoHS-compliant packaging, supporting environmental regulations and green manufacturing processes. It is supplied in tape and reel format to streamline automated assembly line operations, enhancing production efficiency and reducing handling errors.

The device utilizes advanced planar technology delivering ultra-low on-resistance of 0.11 mΩ. It supports a maximum power dissipation of 2 watts for efficient thermal management. Designed for automotive applications, it offers a wide operating temperature range from -55°C to 175°C.

Maximum gate-source voltage rating of 20 V enables robust operation. Logic level gate drive ensures compatibility with low voltage control circuitry. Dual N and P channel MOSFET configuration facilitates versatile circuit design.

Available in tape and reel packaging for automated manufacturing assembly. Lead-free and RoHS compliant for environmentally responsible use.

This MOSFET is ideal for power management in automotive electronics, industrial control systems, and other applications requiring reliable switching elements. Explore more products by Infineon and related semiconductor components on EnvMart for comprehensive electronic component sourcing.

Infineon HEXFET Dual Type P, Type N-Channel MOSFET 4.7A -55V 8-Pin SOIC AUIRF7343QTR
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for the AUIRF7343QTR is 4.7 amperes.

This model has a maximum drain-source voltage rating of -55 volts.

The maximum power dissipation rating for the AUIRF7343QTR is 2 watts.

It operates within a wide temperature range from -55°C to 175°C.

The device is supplied in tape and reel packaging, optimized for automated assembly.

The maximum gate-source voltage rating is 20 volts, ensuring robust operation.

The AUIRF7343QTR features an ultra-low on-resistance of 0.11 mΩ.

This model has an 8-pin configuration.

It features dual N and P channel configurations for flexible circuit design.

Yes, the AUIRF7343QTR is lead-free and RoHS compliant, supporting environmentally friendly manufacturing.

The forward voltage for this MOSFET is -1.2 volts.

This device utilizes a surface mount configuration.

Related Products

Other Products from this brand

$2.19
$2.13 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$2.19
$2.13
Tax included