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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRF7343QTR |
| Mount Type | Surface Mount |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | -55V |
| Maximum Drain Source Resistance Rds | 0.11mΩ |
| Maximum Power Dissipation Pd | 2W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Infineon AUIRF7343QTR HEXFET Dual Type P, Type N-Channel MOSFET is engineered with advanced planar technology to achieve ultra-low on-resistance, making it optimal for power-efficient electronic designs. Packaged in an 8-pin SOIC surface mount format, this device features a maximum continuous drain current of 4.7 amperes and a maximum drain-source voltage of -55 volts, meeting the demands of contemporary automotive and industrial electronics.
This MOSFET supports a maximum power dissipation of 2 watts, allowing it to handle significant power loads with stable thermal performance. It operates reliably over a broad temperature range from -55°C to 175°C, suitable for harsh environmental conditions commonly encountered in automotive and industrial applications.
The device includes a maximum gate-source voltage rating of 20 volts and a forward voltage of -1.2 volts. Its logic level gate drive capability ensures direct compatibility with low voltage logic circuits, enabling efficient switching performance. The dual N and P channel construction allows more flexible designs where complementary MOSFET characteristics are beneficial.
Infineon's HEXFET AUIRF7343QTR is offered in lead-free, RoHS-compliant packaging, supporting environmental regulations and green manufacturing processes. It is supplied in tape and reel format to streamline automated assembly line operations, enhancing production efficiency and reducing handling errors.
The device utilizes advanced planar technology delivering ultra-low on-resistance of 0.11 mΩ. It supports a maximum power dissipation of 2 watts for efficient thermal management. Designed for automotive applications, it offers a wide operating temperature range from -55°C to 175°C.
Maximum gate-source voltage rating of 20 V enables robust operation. Logic level gate drive ensures compatibility with low voltage control circuitry. Dual N and P channel MOSFET configuration facilitates versatile circuit design.
Available in tape and reel packaging for automated manufacturing assembly. Lead-free and RoHS compliant for environmentally responsible use.
This MOSFET is ideal for power management in automotive electronics, industrial control systems, and other applications requiring reliable switching elements. Explore more products by Infineon and related semiconductor components on EnvMart for comprehensive electronic component sourcing.
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