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Nexperia P-Channel Enhancement MOSFET 13.7A, 20V, 8-Pin MLPAK33 Surface Mount PXP018-20QXJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PXP018-20QXJ
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type MLPAK33
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 13.7A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 13.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Utilizes trench MOSFET technology for enhanced performance.
  • Features a low threshold voltage suitable for high-side load switching.
  • Maximum power dissipation of 81 W supports robust operation.
  • Can operate between temperatures of -55°C to 175°C.
  • Surface mount device with an 8-pin MLPAK33 (SOT8002) package.
  • Maximum gate-source voltage rating of 20 V ensures reliability.
  • Ideal for battery management, DC-to-DC conversion, and switching circuits.
  • Maximum continuous drain current of 13.7 A for demanding power applications.

Product Description

Nexperia PXP018-20QXJ is a P-Channel enhancement mode MOSFET designed for efficient power management within electronic circuits. This component integrates trench MOSFET technology inside an 8-pin MLPAK33 surface-mounted package, ensuring compactness and effective heat dissipation for industrial and commercial applications.

This MOSFET supports a continuous drain current of 13.7 A and can handle a maximum drain-source voltage of 20 V. Its maximum power dissipation rating is 81 W, allowing it to operate reliably under demanding loads. The device is rated for a wide operating temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.

The low threshold voltage characteristic and enhancement mode operation make it an excellent choice for high-side load switches, battery management systems, and DC-to-DC converters. Its surface mount configuration with an 8-pin MLPAK33 package facilitates automated PCB mounting for high-volume manufacturing.

Utilizes trench MOSFET technology for enhanced switching efficiency. Low threshold voltage for effective high-side switching applications. High maximum continuous drain current of 13.7 A supports power-intensive circuits.

Wide operating temperature range of -55°C to 175°C for diverse environments. Maximum gate-source voltage rating of 20 V ensures robustness. Package type MLPAK33 for compact surface mount integration. Maximum power dissipation rated at 81 W for thermal reliability.

Suited for battery management and DC-to-DC conversion applications.

This MOSFET is widely used within the electronic components industry for semiconductor power management solutions. It is designed for reliable operation in areas such as industrial controls, automotive electronics, and consumer electronics requiring efficient transistor switching and power regulation.

Explore further Nexperia MOSFET products and the full range of discrete semiconductor devices at EnvMart for your industrial and commercial electronics needs.

Nexperia P-Channel Enhancement MOSFET 13.7A, 20V, 8-Pin MLPAK33 Surface Mount PXP018-20QXJ
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Frequently Asked Questions

The maximum continuous drain current for this model is 13.7 A, making it suitable for power-intensive applications.

This MOSFET has a maximum drain-source voltage rating of 20 V, ensuring it can handle demanding electrical conditions.

The maximum power dissipation rating for the PXP018-20QXJ is 81 W, allowing for reliable operation under heavy loads.

It can operate within a wide temperature range of -55°C to 175°C, making it suitable for various industrial environments.

The PXP018-20QXJ is packaged in an 8-pin MLPAK33 surface mount configuration, which facilitates automated PCB mounting.

This model features a P-Channel type, designed for enhancement mode operation.

The maximum gate-source voltage rating for the PXP018-20QXJ is 20 V, ensuring robust performance.

The maximum drain-source resistance (Rds) is rated at 13.6 mΩ, contributing to its efficiency in switching applications.

This MOSFET is ideal for battery management systems, DC-to-DC converters, and high-side load switching applications.

The MLPAK33 package features 8 pins, facilitating its integration into electronic circuits.

It utilizes trench MOSFET technology, which enhances switching efficiency and performance.

The country of origin for this model is India.

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