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Nexperia Type P-Channel Enhancement MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PXP011-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP011-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes trench MOSFET technology for low threshold voltage and high efficiency.
- Designed for high-side load switching applications in power management.
- Supports battery management and DC-to-DC conversion circuits effectively.
- Maximum power dissipation rating of 81 W ensures reliable operation under high loads.
- Wide operating temperature range from -55°C to 175°C suits harsh industrial environments.
- Features a maximum gate source voltage of 20 V for enhanced control.
- Compact MLPAK33 (SOT8002) package with surface mount design for space-saving PCB layouts.
- Maximum drain-source resistance of 13.6 milliohms enhances conduction efficiency.
Product Description
The Nexperia PXP011-20QXJ is a Type P-Channel enhancement mode MOSFET designed using trench MOSFET technology to provide low threshold voltage and high efficiency in power electronic applications. Housed in a compact 8-pin MLPAK33 (SOT8002) surface-mounted device package, this MOSFET is optimized for use in high-side load switching and battery management circuits.
Offering a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, the device supports effective DC-to-DC conversion and switching circuits in industrial, automotive, and commercial electronic assemblies. With a maximum power dissipation of 81 W, it maintains reliable performance even in high-load scenarios.
The MOSFET features a maximum gate-source voltage of 20 V, enabling precise control during switching operations. It operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for demanding environments and automotive applications despite lacking specific automotive approvals.
The 8-pin surface mount configuration simplifies integration into complex PCB designs, while the maximum drain-source resistance of 13.6 mΩ ensures efficient current conduction and minimal power loss. This makes the PXP011-20QXJ ideal for power management modules requiring robust, compact, and efficient semiconductor devices.
Employs trench MOSFET technology for enhanced switching efficiency and low voltage threshold. Supports high-side load switching, battery management, and DC-to-DC conversion applications. Compact MLPAK33 surface mount package allows efficient PCB space utilization.
Wide operational temperature stability ensures performance in industrial and commercial systems. High maximum power dissipation rating provides reliability under demanding electrical loads. Low maximum drain-source resistance reduces conduction losses.
8-pin design enables complex circuit configurations with ease. This product is categorized under discrete semiconductors with a focus on MOSFET technology used broadly in electronic manufacturing, power conversion, and control systems.
Explore related MOSFETs and semiconductor products at EnvMart for comprehensive solutions in electronics design and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 10.3 A.
It has a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 81 W, ensuring reliable operation under high loads.
This model operates over a wide temperature range from -55°C to 175°C.
It is housed in a compact MLPAK33 (SOT8002) surface-mounted package.
The maximum gate-source voltage is 20 V, which allows for enhanced control during switching operations.
The maximum drain-source resistance is 13.6 milliohms, which enhances conduction efficiency.
It is designed for high-side load switching, battery management, and DC-to-DC conversion applications.
This model has a total of 8 pins.
It utilizes a Type P channel configuration.
The country of origin for this model is India.
This model uses a surface mount type for installation.
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