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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 75 V, 300 mA MMBD914-7-F

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBD914-7-F
Width 2.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • Supports a maximum forward current of 300 mA.
  • Maximum peak reverse repetitive voltage of 75 volts.
  • Surface mount device with 3 pins in SOT-23 package type.
  • Maximum power dissipation of 350 milliwatts for efficient operation.
  • Peak reverse recovery time of 4 nanoseconds, suitable for fast switching.
  • Operates within a temperature range of -65°C to 150°C.
  • Maximum forward voltage of 1.25 volts ensures low voltage drop.
  • Peak non-repetitive forward surge current rating of 2 amperes.

Product Description

DiodesZetex MMBD914-7-F is a high-performance Silicon Junction Switching Diode designed for surface mount applications in electronics and electrical systems. This switching diode features a small form factor with a 3-Pin SOT-23 package, making it ideal for compact PCB designs in modern industrial, consumer electronics, and power management applications.

The device supports a maximum forward current of 300 mA and a peak reverse repetitive voltage of 75 volts, providing reliable switching performance in low to moderate-power circuits. It also boasts a fast peak reverse recovery time of 4 ns, allowing for efficient switching with minimal signal distortion.

This switching diode operates effectively across a wide temperature range from -65°C to 150°C, ensuring robust performance in various environmental conditions encountered in industrial, automotive, and commercial electronic equipment.

The maximum forward voltage of 1.25 V minimizes voltage loss, contributing to power efficiency in sensitive circuits. With a maximum power dissipation of 350 mW, this device handles surges up to 2A non-repetitively, safeguarding connected components during transient events.

Its compact dimensions - 3 mm length, 2.5 mm width, and 1.1 mm height - facilitate its integration onto dense PCBs where space and weight are critical factors. Supports a maximum forward current of 300 mA. Maximum peak reverse repetitive voltage of 75 volts.

Surface mount SOT-23 package with 3 pins. Maximum power dissipation of 350 milliwatts. Peak reverse recovery time of 4 nanoseconds. Operating temperature range from -65°C to 150°C. Maximum forward voltage of 1.25 volts. Compact size: 3 mm × 2.5 mm × 1.1 mm.

Peak non-repetitive forward surge current of 2 amperes. No specific automotive standard certifications.

This switching diode is suitable for industrial electronics, power management circuits, signal switching, and automotive electronics that do not require specialized automotive standard approvals.

Browse EnvMart for an extensive selection of semiconductor Switching Diodes and discrete semiconductors for all electronic design and manufacturing needs.

DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 75 V, 300 mA MMBD914-7-F
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Frequently Asked Questions

The maximum forward current of this model is 300 mA.

It has a peak reverse repetitive voltage rating of 75 volts.

This diode is packaged in a surface mount SOT-23 type with 3 pins.

The maximum power dissipation for this diode is 350 milliwatts.

The peak reverse recovery time is 4 nanoseconds, allowing for fast switching.

It operates effectively within a temperature range of -65°C to 150°C.

The maximum forward voltage of this diode is 1.25 volts, which helps minimize voltage drop.

The peak non-repetitive forward surge current rating is 2 amperes.

The dimensions of this model are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

This diode features a single diode configuration.

It is suitable for industrial electronics, power management circuits, signal switching, and automotive electronics.

The country of origin for this diode is India.

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