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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 4.57mm |
| Model | ES3DB-13-F |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 900mV |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
DiodesZetex ES3DB-13-F is a high-performance Switching Diode specifically engineered for electronic components requiring reliable rectification and switching capabilities. This single silicon junction diode supports a maximum forward current of 3 A and offers a peak reverse voltage of 200 V, making it ideal for various power and connector applications.
The 2-pin SMB package ensures easy surface mounting on printed circuit boards, allowing improved assembly efficiency and space-saving design in electronics manufacturing. With a peak reverse recovery time of just 25 ns, the diode exhibits rapid switching properties, beneficial for fast switching circuits and high-frequency applications.
The diode can withstand a peak non-repetitive forward surge current of 100 A which provides robustness against transient surge currents. The maximum forward voltage drop is maintained at 900 mV, optimizing power efficiency by minimizing conduction losses during operation.
Designed to operate reliably over a wide temperature range from -55°C to 150°C, this diode suits diverse industrial environments including industrial automation, power supply regulation, and electronic switching systems.
The diode features a 2-pin SMB surface mount package. Maximum forward current of 3 A ensures robust conduction. Peak reverse voltage rating of 200 V offers protection against voltage spikes. Peak reverse recovery time of 25 ns enables fast switching applications.
Wide operating temperature range from -55°C to 150°C supports harsh environments. Compact package dimensions enable efficient PCB layout. High peak non-repetitive surge current capability enhances durability.
This diode is manufactured in China and is supplied as a new product. It is suitable for use in electronics manufacturing, power management, semiconductor circuits, and a broad range of industrial and commercial electronic assemblies.
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