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Nexperia Silicon Junction Switching Diode Single 3-Pin SOT-23 200 mA 120 V BAS19,215

Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BAS19,215
Width 1.4mm
Mount Type Surface
Series BAS19
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 120V

Key Features

  • This diode supports high-density circuit designs suitable for surface mounting.
  • Maximum forward current is 200 mA to handle moderate signal switching loads.
  • The peak reverse voltage rating is 120 V, ensuring robust performance in switching applications.
  • Maximum power dissipation is 250 mW, designed for low-power operations.
  • The diode features low leakage current and fast switching with a peak reverse recovery time of 4 ns.
  • Compact dimensions with length 3 mm, width 1.4 mm, and height 1 mm enable space-efficient PCB integration.
  • Operational temperature range spans from -65°C to 150°C for reliable performance under various environmental conditions.
  • Supplied in an industry-standard 3-pin SOT-23 surface mount package for automated assembly.

Product Description

The Nexperia BAS19,215 silicon junction switching diode is a single diode designed for electronic and power connector applications requiring reliable switching with low capacitance and high switching speed. This model features a forward current rating of 200 mA and a peak reverse voltage of 120 V, suitable for high-density and compact circuit designs.

Housed in a SOT-23 3-pin surface mount package with small dimensions (3 mm length, 1.4 mm width, and 1 mm height), it facilitates efficient PCB layouts and automated manufacturing processes. The diode's maximum operating temperature is 150°C, while it can function down to -65°C, ensuring durability across a wide range of industrial and commercial environments.

Its low power dissipation of 250 mW and fast peak reverse recovery time of 4 ns make it ideal for switching circuits in electronic components, power connectors, and discrete semiconductor devices. These features support low-leakage current and stable operation under surge conditions, backed by a peak non-repetitive forward surge current rating of 2.5 A.

This diode supports high-density circuit designs suitable for surface mounting. Maximum forward current is 200 mA to handle moderate signal switching loads. The peak reverse voltage rating is 120 V, ensuring robust performance in switching applications.

Maximum power dissipation is 250 mW, designed for low-power operations. The diode features low leakage current and fast switching with a peak reverse recovery time of 4 ns. Compact dimensions with length 3 mm, width 1.4 mm, and height 1 mm enable space-efficient PCB integration.

Operational temperature range spans from -65°C to 150°C for reliable performance under various environmental conditions. Supplied in an industry-standard 3-pin SOT-23 surface mount package for automated assembly. Ideal for electronic components and power connectors in discrete semiconductor switching diode applications.

This switching diode is widely used in industrial, laboratory, and manufacturing electronic equipment, providing efficient signal switching and protection. Its packaging and power ratings make it suitable for use in consumer electronics and automotive low-power systems. Nexperia's BAS19,215 is a trusted solution in the semiconductor discrete components category.

Explore EnvMart's extensive range of semiconductor Switching Diodes and related electronic components for your design and production needs.

Nexperia Silicon Junction Switching Diode Single 3-Pin SOT-23 200 mA 120 V BAS19,215
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Frequently Asked Questions

The maximum forward current for this model is 200 mA, suitable for handling moderate signal switching loads.

The peak reverse voltage rating is 120 V, ensuring robust performance in switching applications.

This model has compact dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height, facilitating space-efficient PCB integration.

The maximum power dissipation for the BAS19,215 is 250 mW, designed for low-power operations.

The operational temperature range spans from -65°C to 150°C, allowing reliable performance under various environmental conditions.

It is supplied in an industry-standard 3-pin SOT-23 surface mount package, suitable for automated assembly.

The peak reverse recovery time is 4 ns, which supports fast switching capabilities.

The peak non-repetitive forward surge current rating is 2.5 A, indicating its ability to handle surge conditions.

This model features a single diode configuration, making it suitable for various electronic applications.

The BAS19,215 is designed for surface mounting, which is ideal for high-density circuit designs.

The maximum forward voltage for the BAS19,215 is 1.25 V, which is relevant for its operation in circuits.

This diode belongs to the BAS19 series of silicon junction switching diodes, known for their reliable performance in switching applications.

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