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DiodesZetex Silicon Junction Switching Diode Single 300 mA 100 V SOD-123 BAV16W-7-F

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model BAV16W-7-F
Width 1.7mm
Mount Type Surface
Series BAV16W
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 400mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • This diode features a single silicon junction configuration ensuring reliable switching performance.
  • Surface mount design allows for efficient PCB assembly and compact device layouts.
  • Supports a maximum power dissipation of 400 mW and a peak non-repetitive forward surge current of 2 A.
  • Fast peak reverse recovery time of 4 ns supports high-speed switching applications.
  • Operating temperature ranges from -65°C up to 150°C suitable for various industrial environments.
  • Compact dimensions of 2.85 mm length, 1.7 mm width, and 1.35 mm height.
  • Does not carry automotive or special standards approvals.
  • Manufactured in China with new product condition assurance.

Product Description

DiodesZetex BAV16W-7-F is a high-quality silicon junction switching diode designed for discrete semiconductor applications requiring reliable and fast switching capabilities. It supports a maximum forward current of 300 mA and a peak reverse repetitive voltage of 100 volts.

This device comes in the SOD-123 surface mount package, which facilitates compact PCB designs and efficient mass assembly. With a peak reverse recovery time of only 4 nanoseconds, it is suitable for applications demanding rapid switching and minimal signal distortion.

The diode features a single silicon junction configuration and a pin count of 2, meeting standard discrete semiconductor requirements. Its maximum power dissipation rating is 400 milliwatts, and it can withstand a peak non-repetitive forward surge current of 2 amperes, ensuring robust handling of transient loads.

Operating reliably over a temperature range from -65°C to 150°C, this diode is adaptable to demanding industrial, electronic component, and discrete semiconductor environments.

Its compact physical dimensions of 2.85 mm length, 1.7 mm width, and 1.35 mm height allow it to fit into space-constrained designs. While it does not carry automotive certifications or standards approvals, it is manufactured under strict quality control in China and is supplied in new condition.

This diode features a single silicon junction configuration ensuring reliable switching performance. Surface mount design allows for efficient PCB assembly and compact device layouts. Supports a maximum power dissipation of 400 mW and a peak non-repetitive forward surge current of 2 A.

Fast peak reverse recovery time of 4 ns supports high-speed switching applications. Operating temperature ranges from -65°C up to 150°C suitable for various industrial environments. Compact dimensions of 2.85 mm length, 1.7 mm width, and 1.35 mm height.

Does not carry automotive or special standards approvals. Manufactured in China with new product condition assurance.

This diode finds extensive use across electronic manufacturing, industrial equipment, power supply design, and discrete semiconductor applications requiring efficient and reliable switching elements. DiodesZetex products are known for their quality and consistency in electronic component supply chains.

Explore more semiconductor and Switching Diode options within the Electronics & Electricals category at EnvMart for your circuit design and manufacturing needs.

DiodesZetex Silicon Junction Switching Diode Single 300 mA 100 V SOD-123 BAV16W-7-F
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Frequently Asked Questions

The maximum forward current of this model is 300 mA.

It has a peak reverse repetitive voltage rating of 100 volts.

This diode has dimensions of 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height.

The maximum power dissipation for this unit is 400 mW.

It can handle a peak non-repetitive forward surge current of 2 A.

The peak reverse recovery time is 4 nanoseconds, making it suitable for high-speed switching applications.

The operating temperature range for this diode is from -65°C to 150°C.

It comes in a SOD-123 surface mount package, facilitating compact PCB designs.

This diode has a pin count of 2.

It features a single silicon junction configuration.

No, this diode does not carry automotive or special standards approvals.

It is manufactured in China under strict quality control.

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