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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC072N04LDATMA1 |
| Mount Type | Surface Mount |
| Series | BSC072N04LD |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Maximum Power Dissipation Pd | 65W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Standards/ApprovalsIEC climatic Category, DIN IEC 68-1 | 55/175/56 |
Infineon BSC072N04LDATMA1 is a high-performance dual N-Channel Power MOSFET designed for switching and power management in industrial and electronics applications. It supports a maximum continuous drain current of 20 amperes and a maximum drain-source voltage of 40 volts, making it suitable for efficient power conversion in power supplies and motor control circuits.
Encapsulated in an 8-pin SuperSO8 5 x 6 mm surface mount package, this MOSFET features low on-resistance of 7.2 milliohms to minimize conduction losses. With a maximum gate-source voltage rating of 16 volts and a typical gate charge of 52 nanocoulombs, it offers rapid switching capabilities optimized for synchronous rectification applications in switch mode power supplies (SMPS).
The device is designed for robust operation in harsh industrial environments with an operating temperature range from -55°C to 175°C and meets IEC climatic category and DIN IEC standards. Additionally, it is halogen-free, conforming to IEC61249-2-21 environmental safety standards.
This MOSFET includes two elements per chip, allowing for efficient dual-channel operation in power conversion circuits. Its excellent thermal resistance and power dissipation rating of 65 watts ensure reliable performance in demanding electrical and electronic systems.
The device features an 8-pin SuperSO8 5 x 6 mm surface mount package. Maximum drain-source resistance is 7.2 milliohms for efficient conduction. Gate-source voltage rating supports up to 16 volts. Typical gate charge is 52 nanocoulombs for fast switching.
Maximum power dissipation is rated at 65 watts. Operating temperature range is -55°C to 175°C. Compliant with IEC climatic category and environmental standards. Contains two elements per chip for dual-channel functionality.
Ideal for use in industrial automation, power management, automotive electronics, and switch mode power supply design, the Infineon BSC072N04LDATMA1 MOSFET enhances efficiency and reliability. It supports surface mount assembly for compact and high-density PCB layouts.
Explore more semiconductor components and MOSFET offerings at EnvMart for advanced industrial and electronics applications.
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