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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFS3107TRL |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 260A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Infineon AUIRFS3107TRL N-Channel MOSFET is a high-performance automotive grade discrete semiconductor in a surface mount TO-263 package designed for power switching applications. It offers a maximum continuous drain current of 260 A and a maximum drain-source voltage of 75 V, making it suitable for heavy-duty power electronics in industrial, automotive, and electronic component applications.
This MOSFET features an ultra-low on-resistance value of 3 milliohms, reducing conduction losses and enhancing system efficiency. It can dissipate up to 81 W of power and operates reliably over a wide temperature range from -55°C to 175°C, which allows use in harsh environments common in automotive and industrial settings.
The device also supports fast switching with a typical gate charge of just 80 nC, enabling efficient switching performance. It is qualified to the automotive standard AEC-Q101, ensuring suitability for automotive electronics systems. The compact 3-pin TO-263 surface-mount package is designed for easy integration into printed circuit boards, supporting automated assembly processes.
Typical use cases include power control modules, automotive electronics, industrial motor drives, power supplies, and electronic power converters. The design supports improved energy efficiency and thermal management in advanced systems.
The product is RoHS compliant, reflecting environmental safety standards. Its forward voltage drop at 1.3 V helps maintain overall system efficiency by minimizing conduction losses during operation.
Maximum continuous drain current: 260 A. Maximum drain-source voltage: 75 V. Package type: TO-263 surface mount. Max on-resistance (Rds): 3 mΩ. Max power dissipation: 81 W. Operating temperature range: -55°C to 175°C. Drive charge: 80 nC typical.
Forward voltage drop: 1.3 V. AEC-Q101 automotive standard qualified. RoHS compliant.
This Infineon MOSFET is ideal for electronic component manufacturers, automotive system integrators, and industrial equipment developers seeking a reliable and efficient power transistor.
Explore further high-quality MOSFET and semiconductor products in the Electronics & Electricals category at EnvMart for your industrial and electronic design needs.
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