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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.5mm |
| Length | 8.1mm |
| Model | NTMTSC4D3N15MC |
| Width | 1.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 174A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 293W |
| Typical Gate Charge Qg @ Vgs | 79nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
onsemi NTMTSC4D3N15MC is an industrial-grade N-Channel power MOSFET optimized for high current and voltage applications. It supports a continuous drain current of 174 A and withstands drain-source voltages up to 150 V, making it well suited for power switching and battery protection circuits.
The device is housed in a low-profile 8-pin TDFN package, measuring 8.1 mm in length, 8.5 mm in height, and 1.2 mm in width, allowing compact PCB layouts. It features a maximum power dissipation rating of 293 W, ensuring it can sustain heavy loads without overheating.
Key electrical characteristics include a maximum drain-source resistance of 5 mΩ to reduce conduction losses and a maximum gate-source voltage of 20 V with a typical gate charge of 79 nC, contributing to efficient switching performance. It operates reliably within a temperature range from -55°C to 175°C, suitable for harsh industrial, automotive, and power management environments.
This MOSFET's surface mount design simplifies assembly in power supplies, switching regulators, and reverser battery protection systems. The component lacks automotive certification but maintains high thermal performance and wettable flank features to facilitate optical inspection.
Applications include industrial power electronics, power supplies, automotive battery management, and switching regulators. This MOSFET provides high power dissipation capability of 293 W for robust performance. It features a low maximum drain-source resistance of 5 milliohms to minimize conduction losses.
Supports a maximum gate-source voltage of 20 V with typical gate charge of 79 nC for efficient switching. Operating temperature range from -55°C to 175°C enables reliability in demanding environments. Compact dimensions of 8.1 mm length, 8.5 mm height, and 1.2 mm width in surface-mount TDFN package.
Designed for surface mounting with an 8-pin configuration for versatile circuit integration. Explore the comprehensive onsemi MOSFET range and related power components at EnvMart.
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