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onsemi Industrial N-Channel Power MOSFET 174 A 150 V 8-Pin TDFN NTMTSC4D3N15MC

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 8.5mm
Length 8.1mm
Model NTMTSC4D3N15MC
Width 1.2mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TDFN
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 174A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 5mΩ
Channel Mode N
Maximum Power Dissipation Pd 293W
Typical Gate Charge Qg @ Vgs 79nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET provides high power dissipation capability of 293 W for robust performance.
  • It features a low maximum drain-source resistance of 5 milliohms to minimize conduction losses.
  • Supports a maximum gate-source voltage of 20 V with typical gate charge of 79 nC for efficient switching.
  • Operating temperature range from -55°C to 175°C enables reliability in demanding environments.
  • Compact dimensions of 8.1 mm length, 8.5 mm height, and 1.2 mm width in surface-mount TDFN package.
  • Designed for surface mounting with an 8-pin configuration for versatile circuit integration.

Product Description

onsemi NTMTSC4D3N15MC is an industrial-grade N-Channel power MOSFET optimized for high current and voltage applications. It supports a continuous drain current of 174 A and withstands drain-source voltages up to 150 V, making it well suited for power switching and battery protection circuits.

The device is housed in a low-profile 8-pin TDFN package, measuring 8.1 mm in length, 8.5 mm in height, and 1.2 mm in width, allowing compact PCB layouts. It features a maximum power dissipation rating of 293 W, ensuring it can sustain heavy loads without overheating.

Key electrical characteristics include a maximum drain-source resistance of 5 mΩ to reduce conduction losses and a maximum gate-source voltage of 20 V with a typical gate charge of 79 nC, contributing to efficient switching performance. It operates reliably within a temperature range from -55°C to 175°C, suitable for harsh industrial, automotive, and power management environments.

This MOSFET's surface mount design simplifies assembly in power supplies, switching regulators, and reverser battery protection systems. The component lacks automotive certification but maintains high thermal performance and wettable flank features to facilitate optical inspection.

Applications include industrial power electronics, power supplies, automotive battery management, and switching regulators. This MOSFET provides high power dissipation capability of 293 W for robust performance. It features a low maximum drain-source resistance of 5 milliohms to minimize conduction losses.

Supports a maximum gate-source voltage of 20 V with typical gate charge of 79 nC for efficient switching. Operating temperature range from -55°C to 175°C enables reliability in demanding environments. Compact dimensions of 8.1 mm length, 8.5 mm height, and 1.2 mm width in surface-mount TDFN package.

Designed for surface mounting with an 8-pin configuration for versatile circuit integration. Explore the comprehensive onsemi MOSFET range and related power components at EnvMart.

onsemi Industrial N-Channel Power MOSFET 174 A 150 V 8-Pin TDFN NTMTSC4D3N15MC
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Frequently Asked Questions

The maximum continuous drain current for the NTMTSC4D3N15MC is 174 A.

It can withstand a maximum drain-source voltage of 150 V.

This MOSFET has a maximum power dissipation rating of 293 W.

The maximum drain-source resistance is 5 milliohms.

The typical gate charge at a gate-source voltage of 20 V is 79 nC.

It operates reliably within a temperature range from -55°C to 175°C.

The dimensions of the TDFN package are 8.1 mm in length, 8.5 mm in height, and 1.2 mm in width.

This model has 8 pins.

The maximum gate-source voltage supported is 20 V.

It is suitable for applications in industrial power electronics, power supplies, automotive battery management, and switching regulators.

This unit is designed for surface mounting.

The country of origin for this MOSFET is India.

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