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Infineon HEXFET Type P-Channel MOSFET 31A 55V 3-Pin TO-252 AUIRFR5305TRL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFR5305TRL |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.3V |
Key Features
- This MOSFET has a maximum continuous drain current of 31A.
- It supports a maximum drain-source voltage of 55V for reliable operation.
- The package type is TO-252 with a 3-pin surface mount design.
- The device features low on-resistance of 65 milliohms ensuring high efficiency.
- Typical gate charge is 63 nanocoulombs at Vgs.
- Maximum power dissipation is 110 Watts allowing effective heat management.
- Operates in a temperature range from -55°C to 175°C.
- Gate-source voltage maximum rating is ±20V for durability.
Product Description
Infineon AUIRFR5305TRL is a HEXFET Type P-Channel MOSFET designed for high power automotive and industrial use. It is equipped to handle a continuous drain current of 31A and withstands drain-source voltages up to 55V. This device is enclosed in a 3-pin TO-252 surface-mount package, optimized for space saving on PCBs.
Its low on-resistance of 65 milliohms minimizes power losses and improves efficiency, coupled with a typical gate charge of 63 nanocoulombs that supports fast switching capabilities. The device can dissipate up to 110 Watts of power, aided by its robust packaging and thermal design. The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, suitable for harsh environmental conditions.
Advanced planar technology enhances the device's ruggedness and dynamic dV/dT tolerance, critical in automotive electronics and industrial power management. The gate-source voltage tolerance up to ±20V offers protection against voltage spikes. Being AEC-Q101 qualified ensures compliance with automotive quality standards.
This MOSFET is ideal for use in automotive power switching, motor controls, power management circuits, and other demanding industrial applications. It is RoHS compliant and lead-free, making it environmentally responsible.
This MOSFET has a maximum continuous drain current of 31A. It supports a maximum drain-source voltage of 55V for reliable operation. The package type is TO-252 with a 3-pin surface mount design. The device features low on-resistance of 65 milliohms ensuring high efficiency.
Typical gate charge is 63 nanocoulombs at Vgs. Maximum power dissipation is 110 Watts allowing effective heat management. Operates in a temperature range from -55°C to 175°C. Gate-source voltage maximum rating is ±20V for durability.
Designed with advanced planar technology for rugged and fast switching performance. Meets automotive standard AEC-Q101 for quality and reliability. Explore more Infineon MOSFETs and related power electronic components in EnvMart's comprehensive catalog for industrial and automotive applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31A.
It supports a maximum drain-source voltage of 55V for reliable operation.
This device is enclosed in a 3-pin TO-252 surface-mount package.
The MOSFET features a low on-resistance of 65 milliohms, ensuring high efficiency.
The typical gate charge is 63 nanocoulombs at Vgs.
The maximum power dissipation is 110 Watts, allowing for effective heat management.
It operates in a temperature range from -55°C to 175°C.
The maximum gate-source voltage rating is ±20V.
Yes, it is AEC-Q101 qualified, ensuring compliance with automotive quality standards.
This model is ideal for automotive power switching, motor controls, and power management circuits.
The country of origin for this MOSFET is India.
It belongs to the HEXFET series, designed for high power applications.
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