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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF9640STRRPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRF9640S |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.8A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5V |
The Vishay IRF9640STRRPBF is a P-Channel type enhancement mode MOSFET designed for high-performance electronic applications requiring reliable switching and amplification. This device supports a continuous drain current of 6.8 A and can withstand a maximum drain-source voltage of 200 V, making it suitable for power management in industrial, automotive, and consumer electronics.
Housed in a 3-pin TO-263 surface mount package, the MOSFET offers ease of board assembly and compact footprint, ideal for modern PCB layouts where space conservation is critical.
The IRF9640STRRPBF's low maximum drain-source resistance of 500 mΩ reduces power loss, improving efficiency in power conversion systems. A maximum power dissipation rating of 125 W ensures stable operation under demanding conditions.
Operating temperature ranges from -55°C to 150°C, accommodating a wide range of environments including automotive and industrial sectors. The device features a typical gate charge of 44 nC at the specified gate-source voltage, contributing to effective switching speeds.
Dimensionally, the MOSFET measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, catering to compact and efficient circuit designs. Its forward voltage of -5 V supports enhanced switching capabilities.
This MOSFET is ideal for applications in power supply regulation, motor control, and switching circuits within industrial, automotive, and manufacturing domains, where durability and precise control are paramount.
The device features a maximum power dissipation rating of 125 W. It has a maximum drain-source resistance of 500 mΩ, ensuring efficient conduction. Operation temperature ranges from -55°C to 150°C, suitable for robust applications.
The typical gate charge at Vgs is 44 nC and supports a maximum gate-source voltage of -20 V to +20 V. Physical dimensions include length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm. Its TO-263 package type supports surface mounting, facilitating integration in compact electronics.
Forward voltage is typically -5 V, optimizing switching performance. EnvMart offers this Vishay IRF9640STRRPBF MOSFET as part of our comprehensive range of semiconductor components, supporting advanced electronics manufacturing and design.
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