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Vishay P-Channel MOSFET 6.8 A, 200 V Enhancement Type, 3-Pin TO-263 Package IRF9640STRRPBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.83mm
Length 10.67mm
Model IRF9640STRRPBF
Width 9.65mm
Mount Type Surface
Series IRF9640S
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 6.8A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 500mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 44nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -5V

Key Features

  • The device features a maximum power dissipation rating of 125 W.
  • It has a maximum drain-source resistance of 500 mΩ, ensuring efficient conduction.
  • Operation temperature ranges from -55°C to 150°C, suitable for robust applications.
  • The typical gate charge at Vgs is 44 nC and supports a maximum gate-source voltage of -20 V to +20 V.
  • Physical dimensions include length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm.
  • Its TO-263 package type supports surface mounting, facilitating integration in compact electronics.
  • Forward voltage is typically -5 V, optimizing switching performance.

Product Description

The Vishay IRF9640STRRPBF is a P-Channel type enhancement mode MOSFET designed for high-performance electronic applications requiring reliable switching and amplification. This device supports a continuous drain current of 6.8 A and can withstand a maximum drain-source voltage of 200 V, making it suitable for power management in industrial, automotive, and consumer electronics.

Housed in a 3-pin TO-263 surface mount package, the MOSFET offers ease of board assembly and compact footprint, ideal for modern PCB layouts where space conservation is critical.

The IRF9640STRRPBF's low maximum drain-source resistance of 500 mΩ reduces power loss, improving efficiency in power conversion systems. A maximum power dissipation rating of 125 W ensures stable operation under demanding conditions.

Operating temperature ranges from -55°C to 150°C, accommodating a wide range of environments including automotive and industrial sectors. The device features a typical gate charge of 44 nC at the specified gate-source voltage, contributing to effective switching speeds.

Dimensionally, the MOSFET measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, catering to compact and efficient circuit designs. Its forward voltage of -5 V supports enhanced switching capabilities.

This MOSFET is ideal for applications in power supply regulation, motor control, and switching circuits within industrial, automotive, and manufacturing domains, where durability and precise control are paramount.

The device features a maximum power dissipation rating of 125 W. It has a maximum drain-source resistance of 500 mΩ, ensuring efficient conduction. Operation temperature ranges from -55°C to 150°C, suitable for robust applications.

The typical gate charge at Vgs is 44 nC and supports a maximum gate-source voltage of -20 V to +20 V. Physical dimensions include length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm. Its TO-263 package type supports surface mounting, facilitating integration in compact electronics.

Forward voltage is typically -5 V, optimizing switching performance. EnvMart offers this Vishay IRF9640STRRPBF MOSFET as part of our comprehensive range of semiconductor components, supporting advanced electronics manufacturing and design.

Vishay P-Channel MOSFET 6.8 A, 200 V Enhancement Type, 3-Pin TO-263 Package IRF9640STRRPBF
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Frequently Asked Questions

The maximum continuous drain current for the IRF9640STRRPBF is 6.8 A.

This MOSFET can withstand a maximum drain-source voltage of 200 V.

It features a maximum power dissipation rating of 125 W.

The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.

The maximum gate-source voltage supported by the IRF9640STRRPBF is -20 V to +20 V.

The typical gate charge at Vgs is 44 nC.

The maximum drain-source resistance is 500 mΩ.

This model operates within a temperature range of -55°C to 150°C.

It utilizes a P-Channel type enhancement mode.

This MOSFET is suitable for applications in power supply regulation, motor control, and switching circuits.

The TO-263 package has 3 pins.

The country of origin for this model is India.

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