Infineon N-Channel MOSFET 600 V 38 A Enhancement Mode 3-Pin TO-263 Package IPB60R055CFD7ATMA1

The Infineon IPB60R055CFD7ATMA1 is a high-performance N-Channel MOSFET designed for power electronics applications requiring robust switching capabilities. Operating at a maximum continuous drain current of 38 A and a drain-source voltage rating of 600 V, this device is optimized for use in switch mode power supplies, resonant converters, and energy-efficient power management systems.

Housed in a TO-263 (D2PAK) 3-pin surface mount package, the MOSFET features enhancement mode operation, which ensures minimal leakage current and efficient device activation. It boasts a maximum drain-source resistance (Rds(on)) of 55 milliohms, minimizing conduction losses and thermal stress during operation.

Key performance features include an ultra-fast body diode and a significantly reduced reverse recovery charge (Qrr), which leads to lower switching losses and improved electromagnetic compatibility. The device also enhances turn-off behavior with reduced gate charge, enabling higher efficiency in high-frequency switching applications.

This MOSFET is particularly suited for use in demanding industrial and commercial sectors such as server power supplies, telecommunication infrastructure, and electric vehicle charging stations. Its advanced semiconductor structure allows for superior ruggedness against reverse diode dv/dt and di/dt stresses, contributing to longer system lifetime and reliability.

While it does not conform to specific automotive or industry standards, the IPB60R055CFD7ATMA1 provides best-in-class Rds(on) to package ratio, enabling compact and lightweight power designs. The device is a direct successor to the CFD2 Superjunction MOSFET family, offering notable efficiency improvements in switched-mode power supply topologies.

Equipped with ultra-fast body diode for enhanced switching performance. Best-in-class reverse recovery charge ensures low switching losses. Improved ruggedness to reverse diode voltage and current transients. Low figure of merit (FOM) combining Rds(on), gate charge, and output capacitance.

Optimized for surface mount applications with TO-263 package. Ideal for industrial, telecom, server, and EV charging power systems. Explore a wide range of Infineon semiconductor products on EnvMart for reliable and high-quality electronic component solutions.