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Infineon CoolMOS N-Channel MOSFET, 6 A, 700 V Enhancement Mode, 3-Pin TO-220 IPA70R900P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA70R900P7SXKSA1 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
Key Features
- Designed using super junction technology for enhanced efficiency.
- Optimized for low losses with very low figure of merit RDS(on)*Qg and RDS(on)*Eoss.
- Supports low switching losses due to minimized Eoss value.
- Includes integrated diode for electrostatic discharge (ESD) protection.
- Suitable for cost-sensitive consumer applications such as chargers, adapters, lighting, and TVs.
- Surface mount type with three pins for easy PCB integration.
- Operates in enhancement mode as an N-channel MOSFET device.
Product Description
Infineon IPA70R900P7SXKSA1 CoolMOS N-Channel MOSFET is engineered for power and efficiency in electronic power systems. Rated for a maximum continuous drain current of 6 A and a drain-source voltage of 700 V, this device comes in a 3-pin TO-220 package suitable for surface mounting.
The CoolMOS P7 series by Infineon incorporates innovative super junction (SJ) technology, significantly reducing conduction and switching losses compared to traditional MOSFETs. This leads to enhanced efficiency, especially in high-voltage and high-frequency switching applications.
Featuring very low RDS(on) resistance of 900 milliohms, the MOSFET ensures minimal conduction losses, while the overall figure of merit supports low gate charge (Qg) and energy loss during switching (Eoss). The integrated ESD protection diode enhances device reliability in electronic circuits subject to transient voltage events.
This MOSFET is inherently designed to operate in enhancement mode as a high voltage N-channel transistor. Its 3-pin TO-220 form factor allows easy mounting and integration on standard printed circuit boards, making it a versatile component for diverse electronics manufacturing.
Super junction CoolMOS technology for superior performance. Low conduction and switching losses minimizing heat dissipation. Integrated ESD diode for device protection. Compact 3-pin TO-220 package fitting standard designs.
Ideal for consumer electronics including chargers and lighting systems. Industrial, electronic manufacturing, power supply design, and consumer electronics sectors commonly utilize this MOSFET for improved power efficiency and reliability.
Explore a broad range of power semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart to find compatible and complementary products for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IPA70R900P7SXKSA1 is 6 A.
This model has a maximum drain-source voltage rating of 700 V.
It comes in a 3-pin TO-220 package, suitable for surface mounting.
The RDS(on) resistance of this MOSFET is 900 milliohms.
The CoolMOS series utilizes super junction technology to enhance efficiency and reduce losses.
Yes, it includes an integrated ESD protection diode for enhanced reliability against transient voltage events.
It is suitable for cost-sensitive consumer applications such as chargers, adapters, lighting, and TVs.
This model is an N-channel MOSFET operating in enhancement mode.
These low figures indicate minimized conduction and switching losses, enhancing overall efficiency during operation.
The country of origin for this MOSFET is India.
This MOSFET has a pin count of 3.
Super junction technology reduces conduction and switching losses, making it more efficient for high-voltage and high-frequency applications.
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