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DiodesZetex P-Channel MOSFET Type DMP, 6.5 A Continuous Drain Current, 40 V Drain Source Voltage, 6-Pin UDFN DMP4047LFDEQ-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 630μm
Length 2.05mm
Model DMP4047LFDEQ-7
Width 2.05mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type UDFN
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 6.5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 34mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 24.9nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET features a maximum continuous drain current of 6.5 A.
  • It has a maximum drain-source voltage rating of 40 V for robust operation.
  • Packaged in a 6-pin UDFN surface mount package for easy PCB integration.
  • Offers low on-resistance of 34 milliohms ensuring efficient power management.
  • Capable of operating in a temperature range from -55°C up to 150°C.
  • Designed as an enhancement mode type with a typical gate charge of 24.9 nC at Vgs.
  • Maximum power dissipation of 2.1 W supports reliable circuit designs.
  • Compliance to automotive standard AEC-Q101 enhances quality and reliability for automotive uses.

Product Description

DiodesZetex DMP4047LFDEQ-7 is a P-Channel MOSFET designed within the DMP series featuring a 6-pin UDFN package optimized for surface mount applications. This enhancement mode device supports a maximum continuous drain current of 6.5 A and a maximum drain-source voltage of 40 V, making it suitable for various industrial and automotive power management circuits.

The device is engineered for automotive-grade performance complying with AEC-Q101 qualification standards and supported by Production Part Approval Process (PPAP). It offers low on-resistance at 34 milliohms and a typical gate charge of 24.9 nC at gate voltage, reducing power loss and improving switching efficiency.

With a maximum power dissipation of 2.1 W and an operating temperature range from -55°C to 150°C, this MOSFET is reliable for harsh automotive and industrial environments. The compact 2.05 mm × 2.05 mm package footprint with a height of 630 μm facilitates high-density PCB designs.

This device is ideally deployed in automotive systems, industrial power supplies, and other electronics requiring efficient control and switching of power with high reliability. Its surface mount package facilitates easy assembly and integration on modern electronic platforms.

This MOSFET features a maximum continuous drain current of 6.5 A. It has a maximum drain-source voltage rating of 40 V for robust operation. Packaged in a 6-pin UDFN surface mount package for easy PCB integration. Offers low on-resistance of 34 milliohms ensuring efficient power management.

Capable of operating in a temperature range from -55°C up to 150°C. Designed as an enhancement mode type with a typical gate charge of 24.9 nC at Vgs. Maximum power dissipation of 2.1 W supports reliable circuit designs.

Compliance to automotive standard AEC-Q101 enhances quality and reliability for automotive uses. Explore a wide selection of Discrete Semiconductors and MOSFETs at EnvMart for industrial, automotive, and electronic applications.

DiodesZetex P-Channel MOSFET Type DMP, 6.5 A Continuous Drain Current, 40 V Drain Source Voltage, 6-Pin UDFN DMP4047LFDEQ-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 6.5 A.

This MOSFET has a maximum drain-source voltage rating of 40 V.

It offers a low on-resistance of 34 milliohms.

The typical gate charge at gate voltage (Vgs) is 24.9 nC.

It can operate in a temperature range from -55°C up to 150°C.

The maximum power dissipation is 2.1 W.

This model is packaged in a 6-pin UDFN surface mount package.

It complies with the automotive standard AEC-Q101.

The dimensions are 2.05 mm x 2.05 mm with a height of 630 μm.

This unit is a P-Channel MOSFET designed for enhancement mode operation.

It is suitable for automotive systems, industrial power supplies, and other electronics requiring efficient power management.

The maximum gate-source voltage (Vgs) is 20 V.

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