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onsemi P-Channel MOSFET 8.4 A, 20 V Enhancement, 4-Pin SOT-223 NTF6P02T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NTF6P02T3G |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NTF6P02 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.3W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 8.4 A ensures robust power handling.
- Maximum drain-source voltage of 20 V suitable for low voltage applications.
- Enhancement mode channel for efficient switching operations.
- Surface mount package type SOT-223 with a compact 4-pin configuration.
- Maximum drain-source resistance of 70 milliohms promotes low conduction losses.
- Gate-source voltage rating of -8 V to +8 V ensures safe device operation.
- Maximum power dissipation of 8.3 W supports thermal stability.
- Operating temperature range from -55°C up to 150°C suitable for demanding environments.
Product Description
onsemi NTF6P02T3G P-Channel MOSFET featuring 8.4 A maximum continuous drain current and a maximum drain-source voltage of 20 V presented in a 4-pin SOT-223 surface mount package. This device operates in enhancement mode, designed to provide efficient switching and low conduction losses, ideal for power management and electronic component applications.
The MOSFET is characterized by a maximum drain-source resistance (Rds) of 70 mΩ and a maximum power dissipation rating of 8.3 W, ensuring reliability and thermal stability even under demanding operational conditions. It supports a gate-source voltage range from -8 V to +8 V, allowing precise control of switching functions.
Operating reliably in temperature ranges from -55°C to 150°C, the NTF6P02T3G is appropriate for use in industrial, automotive, and commercial electronics environments. Its typical gate charge of 15 nC contributes to rapid switching speeds, enhancing overall device performance.
The compact SOT-223 package measures 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height, making it suitable for applications requiring space-saving surface mount components. The device complies with automotive AEC standards, assuring quality and durability for automotive electronics applications.
Maximum continuous drain current of 8.4 A provides robust current handling capabilities. Maximum drain-source voltage of 20 V suitable for low voltage power electronics. Enhancement mode operation for efficient device switching.
Compact 4-Pin SOT-223 surface mount package for space-efficient PCB design. Low maximum drain-source resistance of 70 milliohms reduces power losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 15 nC enabling fast switching performance.
Maximum power dissipation of 8.3 W to handle thermal loads effectively. Compliant with automotive AEC standards for automotive-grade reliability.
This MOSFET is suitable for numerous industrial, automotive, HVAC, and electronic manufacturing applications requiring efficient power switching and management. For more electronic components like this, explore the Semiconductor and MOSFET categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.4 A, ensuring robust power handling capabilities.
The maximum drain-source voltage is 20 V, making it suitable for low voltage applications.
This model comes in a compact 4-pin SOT-223 surface mount package.
The maximum power dissipation rating is 8.3 W, which supports thermal stability during operation.
It operates reliably within a temperature range from -55°C to 150°C, suitable for demanding environments.
The typical gate charge is 15 nC, contributing to rapid switching speeds.
The maximum drain-source resistance is 70 milliohms, which helps reduce conduction losses.
The gate-source voltage rating is from -8 V to +8 V, ensuring safe device operation.
This model complies with automotive AEC standards, assuring quality for automotive applications.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height.
This MOSFET operates in enhancement mode, designed for efficient switching operations.
It is suitable for industrial, automotive, HVAC, and electronic manufacturing applications requiring efficient power switching and management.
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