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Infineon CoolMOS P7 N-Channel MOSFET, 8 A Continuous Drain Current, 800 V Drain Source Voltage, 3-Pin TO-220 IPP80R600P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPP80R600P7XKSA1
Mount Type Through Hole
Series CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 20nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Supports high efficiency flyback converters with optimized switching losses.
  • Incorporates integrated Zener diode ESD protection up to Class 2 (HBM).
  • Designed for industrial power supplies, adapters, chargers, and audio SMPS.
  • Offers up to a 0.6% efficiency gain with lower device temperature compared to predecessors.
  • Features a maximum power dissipation rating of 60 W for robust operation.
  • 3-pin through-hole mount type suitable for easy PCB integration.
  • Enhancement mode device with maximum gate source voltage of 20 V.
  • Maximum drain-source resistance of 600 mΩ ensuring low conduction losses.

Product Description

Infineon IPP80R600P7XKSA1 CoolMOS P7 N-Channel MOSFET is a power semiconductor device optimized for high-efficiency flyback converter applications such as power adapters, chargers, LED drivers, audio switching power supplies, auxiliary power supplies, and industrial power systems. It features an 8 amp continuous drain current and can withstand a maximum drain-source voltage of 800 V, ensuring reliable performance under demanding electrical conditions.

This MOSFET is housed in a TO-220 package with three pins and supports through-hole mounting, making it suitable for various industrial and electronic manufacturing processes. The device offers a maximum power dissipation of 60 W and operates efficiently across a wide temperature range from -55°C to 150°C. The enhancement mode operation with a gate-source voltage rating of 20 V simplifies gate drive requirements.

The integrated Zener diode provides robust electrostatic discharge (ESD) protection up to Class 2 (HBM), enhancing device reliability. Compared to previous generations and competitor parts, this CoolMOS P7 device delivers up to 0.6% efficiency improvements and lowers MOSFET temperature by 2°C to 8°C, contributing to higher power density and improved thermal management in power designs.

Key features include a low maximum drain-source resistance (Rds(on)) of 600 milliohms and a typical gate charge of 20 nanocoulombs, which contribute to reduced switching losses and efficient power conversion. Forward voltage is rated at 900 millivolts.

High efficiency with low switching losses suitable for flyback topologies. High reliability with integrated ESD protection. Wide operating temperature range from -55°C to 150°C. Robust TO-220 through-hole package for easy assembly.

Optimized for industrial, electronic component manufacturing, and power supply applications.

This device is part of Infineon's CoolMOS P7 series, representing a fully optimized portfolio for modern power supply design challenges. It is highly recommended for use in industrial, commercial, and electronic equipment applications where power efficiency and device thermal management are critical.

Explore more Infineon products and semiconductor components in the EnvMart catalog to meet diverse design and manufacturing requirements.

Infineon CoolMOS P7 N-Channel MOSFET, 8 A Continuous Drain Current, 800 V Drain Source Voltage, 3-Pin TO-220 IPP80R600P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 A.

It can withstand a maximum drain-source voltage of 800 V.

The maximum power dissipation rating is 60 W.

The maximum drain-source resistance is 600 mΩ.

It operates efficiently across a wide temperature range from -55°C to 150°C.

This model features a through-hole mount type, suitable for easy PCB integration.

It is housed in a TO-220 package.

The typical gate charge is 20 nC.

The maximum gate-source voltage is rated at 20 V.

It is optimized for high-efficiency flyback converter applications, including power adapters, chargers, and LED drivers.

Yes, it incorporates an integrated Zener diode for ESD protection up to Class 2 (HBM).

This device is part of Infineon's CoolMOS P7 series.

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