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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPP80R600P7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPP80R600P7XKSA1 CoolMOS P7 N-Channel MOSFET is a power semiconductor device optimized for high-efficiency flyback converter applications such as power adapters, chargers, LED drivers, audio switching power supplies, auxiliary power supplies, and industrial power systems. It features an 8 amp continuous drain current and can withstand a maximum drain-source voltage of 800 V, ensuring reliable performance under demanding electrical conditions.
This MOSFET is housed in a TO-220 package with three pins and supports through-hole mounting, making it suitable for various industrial and electronic manufacturing processes. The device offers a maximum power dissipation of 60 W and operates efficiently across a wide temperature range from -55°C to 150°C. The enhancement mode operation with a gate-source voltage rating of 20 V simplifies gate drive requirements.
The integrated Zener diode provides robust electrostatic discharge (ESD) protection up to Class 2 (HBM), enhancing device reliability. Compared to previous generations and competitor parts, this CoolMOS P7 device delivers up to 0.6% efficiency improvements and lowers MOSFET temperature by 2°C to 8°C, contributing to higher power density and improved thermal management in power designs.
Key features include a low maximum drain-source resistance (Rds(on)) of 600 milliohms and a typical gate charge of 20 nanocoulombs, which contribute to reduced switching losses and efficient power conversion. Forward voltage is rated at 900 millivolts.
High efficiency with low switching losses suitable for flyback topologies. High reliability with integrated ESD protection. Wide operating temperature range from -55°C to 150°C. Robust TO-220 through-hole package for easy assembly.
Optimized for industrial, electronic component manufacturing, and power supply applications.
This device is part of Infineon's CoolMOS P7 series, representing a fully optimized portfolio for modern power supply design challenges. It is highly recommended for use in industrial, commercial, and electronic equipment applications where power efficiency and device thermal management are critical.
Explore more Infineon products and semiconductor components in the EnvMart catalog to meet diverse design and manufacturing requirements.
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