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Infineon CoolMOS CFD7 N-Channel MOSFET 38 A 600 V Enhancement Mode 3-Pin TO-247 IPW60R055CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPW60R055CFD7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS CFD7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 38A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 178W |
| Typical Gate Charge Qg @ Vgs | 79nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features ultra-fast body diode for efficient switching performance.
- Low on-resistance of 55 milliohms optimizes power efficiency.
- Rated maximum power dissipation of 178 watts for robust thermal management.
- Improved reverse recovery charge with up to 69% reduction versus competitors.
- Wide operating temperature range from -55°C to 150°C.
- Three-pin through-hole mount design facilitates PCB integration.
- Suitability for industrial, automotive, and power management applications.
- Maximum gate-source voltage rated at 20 volts supporting stable operation.
Product Description
Infineon IPW60R055CFD7XKSA1 CoolMOS CFD7 N-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching in various electronic and industrial applications. This device supports a continuous drain current of 38 A and can withstand a maximum drain-source voltage of 600 V, ensuring reliability under demanding conditions.
The MOSFET features an advanced CoolMOS CFD7 series technology with an integrated ultra-fast body diode for enhanced switching efficiency. Its low on-resistance of 55 milliohms minimizes conduction losses, contributing to improved energy efficiency and reduced heat generation in power circuits.
With a typical gate charge of 79 nC and a maximum gate-source voltage of 20 V, the device offers excellent switching performance and robustness against voltage fluctuations. Its maximum power dissipation rating of 178 W allows for stable operation in high power environments.
The package type is TO-247 with three pins and through-hole mounting, facilitating easy integration into various PCB layouts. The MOSFET operates efficiently across a wide temperature range from -55°C to 150°C, making it suitable for automotive, industrial power supplies, and switching power applications.
Infineon's CoolMOS CFD7 series delivers one of the lowest reverse recovery charges and fastest recovery times in the market, significantly reducing switching losses and electromagnetic interference. This makes it ideal for use in power converters, motor drives, and other switching power circuits where performance and efficiency are critical.
Features ultra-fast body diode for efficient switching performance. Low on-resistance reduces power losses and heat. High continuous drain current and voltage ratings for robust applications. Wide operating temperature range allows deployment in harsh environments.
Designed for industrial, automotive, and power management use cases.
This product comes with the assurance of new condition and is made suitable for integration in power supply design and electronic component applications. Explore the Infineon product range and similar MOSFET offerings on EnvMart for advanced semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 38 A.
This MOSFET can withstand a maximum drain-source voltage of 600 V.
It features a low on-resistance of 55 milliohms, which helps optimize power efficiency.
The maximum power dissipation rating is 178 watts, allowing for robust thermal management.
It operates efficiently across a wide temperature range from -55°C to 150°C.
This model uses a through-hole mounting design, which facilitates PCB integration.
The package type is TO-247, which includes three pins for connection.
The typical gate charge is 79 nC at a specified gate-source voltage.
The maximum gate-source voltage is rated at 20 volts, ensuring stable operation.
It is suitable for industrial, automotive, and power management applications.
This model is an N-channel MOSFET, designed for enhancement mode operation.
The ultra-fast body diode enhances switching performance, reducing switching losses and electromagnetic interference.
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