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Vishay TrenchFET N-Channel MOSFET 210 mA 20 V Enhancement 3-Pin SC-75 SI1032R-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 800μm |
| Length | 1.68mm |
| Model | SI1032R-T1-GE3 |
| Width | 860μm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-75 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21, RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 210mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 340mW |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features TrenchFET technology ensuring efficient power handling performance.
- Designed with surface mount type and a compact 3-pin configuration.
- Maximum drain-source resistance of 10 ohms for effective conduction control.
- Operates reliably between -55°C and 150°C with an enhancement channel mode.
- Supports a maximum gate-source voltage of −6 V to +6 V.
- Forward voltage is rated at 1.2 V for effective switching applications.
- Meets IEC 61249-2-21 and RoHS standards ensuring compliance and safety.
- Small dimensions with length 1.68 mm, width 860 μm, and height 800 μm.
Product Description
Vishay SI1032R-T1-GE3 is a TrenchFET N-Channel MOSFET designed for electronic applications requiring efficient power switching and amplification. It supports a maximum continuous drain current of 210 mA and a maximum drain-source voltage of 20 V, making it suitable for low power circuits.
This enhancement-mode MOSFET is packaged in a compact 3-pin SC-75 surface mount package, optimized for space-constrained layouts. It provides a maximum drain-source resistance of 10 Ω, ensuring minimal conduction losses.
The device operates reliably over a wide temperature range from −55°C to 150°C, making it robust for a variety of industrial and electronic hardware use cases. The gate-source voltage rating of −6 V to +6 V allows for easy interfacing with driver circuits.
Its forward voltage of 1.2 V allows efficient switching characteristics suitable for power management modules and discrete semiconductor assemblies. The transistor adheres to IEC 61249-2-21 and RoHS standards, ensuring environmental compliance.
Physical dimensions are compact with a length of 1.68 mm, width of 860 μm, and height of 800 μm, suitable for densely packed PCB designs in industrial controls, consumer electronics, and embedded systems.
Features TrenchFET technology for improved efficiency and performance. Compact 3-pin SC-75 package type for surface mounting. Enhanced channel mode for controlled conductivity. Wide operating temperature range from -55°C to 150°C.
Compliant with IEC and RoHS standards. Low forward voltage of 1.2 V for efficient operation. Maximum power dissipation rating of 340 mW supports moderate loads.
This MOSFET is ideal for applications in electronic components, power management, discrete semiconductor circuits, and compact embedded assemblies. It enhances energy efficiency and reliability in industrial, consumer, and laboratory devices requiring small, efficient switching components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 210 mA.
It supports a maximum drain-source voltage of 20 V.
The dimensions are 1.68 mm in length, 860 μm in width, and 800 μm in height.
It operates reliably between -55°C and 150°C.
The forward voltage is rated at 1.2 V.
The maximum gate-source voltage is rated between -6 V and +6 V.
This model is packaged in a compact 3-pin SC-75 surface mount package.
The maximum drain-source resistance is 10 ohms.
It meets IEC 61249-2-21 and RoHS standards.
The maximum power dissipation rating is 340 mW.
It features an N-channel type with enhancement mode.
This MOSFET is suitable for electronic components, power management, and discrete semiconductor circuits.
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