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Infineon OptiMOS 3 N-Channel MOSFET 50 A, 150 V Enhancement Mode, 3-Pin TO-220 IPP200N15N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10.2mm |
| Model | IPP200N15N3GXKSA1 |
| Width | 15.93mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features an N-channel enhancement mode for high-efficiency switching applications.
- Maximum continuous drain current of 50 amperes for robust power handling.
- Supports a maximum drain-source voltage of 150 volts suitable for various power circuits.
- Compact 3-pin TO-220 package designed for through-hole mounting and easy PCB integration.
- Low maximum drain-source resistance of 20 milliohms reduces conduction losses.
- High power dissipation capacity of 150 watts enhances thermal performance during operation.
- Wide operating temperature range from -55°C to 175°C for reliable industrial usage.
- Typical gate charge of 23 nanocoulombs enables fast switching speeds.
Product Description
The Infineon OptiMOS 3 N-Channel MOSFET model IPP200N15N3GXKSA1 operates with a maximum continuous drain current of 50 A and can withstand a drain-source voltage of up to 150 V. Packaged in a 3-pin TO-220 through-hole format, this device is engineered for high-frequency switching and synchronous rectification applications, delivering excellent efficiency and low conduction losses.
Featuring an enhancement mode N-channel design, it supports a maximum drain-source resistance of just 20 milliohms, optimizing performance for power supply circuits and industrial electronic solutions. This MOSFET is rated for a maximum power dissipation of 150 W, allowing it to manage substantial thermal loads effectively.
Its operational temperature range from -55°C to 175°C ensures durability in harsh environments, making it suitable for industrial, automation, and power management systems. The typical gate charge of 23 nC allows rapid switching, enhancing efficiency in high-speed switching circuits.
The IPP200N15N3GXKSA1 MOSFET features a maximum gate-source voltage of 20 V and a forward voltage of 1.2 V, providing robust and reliable gate drive characteristics. Its compact height (4.4 mm), length (10.2 mm), and width (15.93 mm) support efficient PCB space utilization.
High-frequency switching and synchronous rectification capabilities. Optimized for industrial and power electronics applications. Robust thermal and voltage tolerances for reliable performance. Through-hole TO-220 format for easy mounting and heat dissipation.
Halogen-free construction ensuring environmental compliance.
This Infineon MOSFET is a key component for engineers designing circuits in industrial electronics, power supplies, and automotive applications. Detailed datasheets and certification documents are available for precise design integration. Browse our semiconductor catalog at EnvMart for more industrial-grade MOSFETs and power electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 amperes.
It can withstand a maximum drain-source voltage of 150 volts.
This MOSFET is packaged in a 3-pin TO-220 format designed for through-hole mounting.
The maximum power dissipation capacity is 150 watts, allowing it to manage substantial thermal loads.
The maximum drain-source resistance is 20 milliohms, which helps reduce conduction losses.
The typical gate charge is 23 nanocoulombs, enabling fast switching speeds.
It operates within a temperature range from -55°C to 175°C, suitable for various industrial applications.
The dimensions are height: 4.4 mm, length: 10.2 mm, and width: 15.93 mm.
The maximum gate-source voltage is 20 volts.
It is optimized for high-frequency switching and synchronous rectification applications in industrial and power electronics.
The forward voltage is 1.2 volts, providing robust gate drive characteristics.
This model features an N-channel enhancement mode design.
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