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Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.02mm
Length 3.04mm
Model SI2325DS-T1-E3
Width 1.4mm
Mount Type Surface
Series Si2325DS
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id -530mA
Maximum Drain Source Voltage Vds -150V
Maximum Drain Source Resistance Rds 1.2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 750mW
Typical Gate Charge Qg @ Vgs 7.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Features a low on-resistance of 1.2 ohms for efficient conduction.
  • Designed with an enhancement mode channel suitable for controlled switching.
  • Supports a maximum power dissipation of 750 mW for steady operation.
  • Encapsulated in a compact 3-pin SOT-23 surface-mount package.
  • Operates reliably in wide temperature ranges from -55°C to 150°C.
  • Gate-source voltage limit is ±20 V to safeguard device integrity.
  • Includes a low typical gate charge of 7.7 nC for fast switching transitions.
  • RoHS compliant, meeting environmental safety standards.

Product Description

Vishay SI2325DS-T1-E3 P-Channel MOSFET is engineered for reliable, high-voltage switching operations with a maximum continuous drain current of 530 mA and a maximum drain-source voltage of 150 V. Its enhancement mode channel ensures precise control in source-to-drain conduction, making it highly suitable for low-power applications in compact electronic assemblies. The device is housed in a 3-pin SOT-23 surface-mount package that minimizes circuit board space while maximizing efficiency.

This MOSFET offers a low drain-source resistance of 1.2 ohms, which reduces conduction losses and supports efficient power management. It features a maximum power dissipation of 750 mW, permitting steady performance under demanding conditions without thermal overstress. The gate-to-source voltage rating is ±20 V, ensuring robust protection against gate overstress during operation. With a typical gate charge of 7.7 nC, this component allows rapid switching transitions for optimized circuit performance.

The device supports an operating temperature range from -55°C to 150°C, offering versatility for diverse industrial and commercial applications. The component complies with RoHS directives, underscoring its manufacture with environmentally friendly materials. Vishay SI2325DS-T1-E3 is particularly suited for high-voltage load switching in power rails, level-shift circuits where P-channel devices are essential, battery protection schemes, reverse-polarity circuits, and compact surface-mount power-management boards.

Compact 3-pin SOT-23 package for space-saving PCB layouts. Enhancement mode transistor design for controlled switching. High voltage capability with -150 V drain-source rating. Low on-resistance enhancing conduction efficiency.

Wide operational temperature tolerance for rugged use. Low gate charge facilitating faster switching speeds. RoHS compliant ensuring environmental safety. Ideal for low-power signal switching and power management circuits.

Not rated for automotive-level standards.

This MOSFET is a critical component in industrial electronics, power management systems, and consumer electronic devices, offering a reliable solution for efficient switching with compact form factor and broad operating conditions. Browse our extensive selection for more Vishay MOSFETs suited for varying technical requirements.

Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
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Frequently Asked Questions

The maximum continuous drain current for this model is 530 mA.

It has a maximum drain-source voltage rating of 150 V.

The typical gate charge is 7.7 nC, allowing for fast switching transitions.

The on-resistance is 1.2 ohms, which enhances conduction efficiency.

The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

The operating temperature range is from -55°C to 150°C.

It features an enhancement mode P-channel design for controlled switching.

The maximum power dissipation is 750 mW, allowing for steady operation under demanding conditions.

The gate-source voltage limit is ±20 V, providing protection against gate overstress.

Yes, this model is RoHS compliant, meeting environmental safety standards.

It is designed for surface mounting, suitable for compact electronic assemblies.

This MOSFET is suitable for high-voltage load switching, battery protection schemes, and power management circuits.

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