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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2325DS-T1-E3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2325DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -530mA |
| Maximum Drain Source Voltage Vds | -150V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 750mW |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Vishay SI2325DS-T1-E3 P-Channel MOSFET is engineered for reliable, high-voltage switching operations with a maximum continuous drain current of 530 mA and a maximum drain-source voltage of 150 V. Its enhancement mode channel ensures precise control in source-to-drain conduction, making it highly suitable for low-power applications in compact electronic assemblies. The device is housed in a 3-pin SOT-23 surface-mount package that minimizes circuit board space while maximizing efficiency.
This MOSFET offers a low drain-source resistance of 1.2 ohms, which reduces conduction losses and supports efficient power management. It features a maximum power dissipation of 750 mW, permitting steady performance under demanding conditions without thermal overstress. The gate-to-source voltage rating is ±20 V, ensuring robust protection against gate overstress during operation. With a typical gate charge of 7.7 nC, this component allows rapid switching transitions for optimized circuit performance.
The device supports an operating temperature range from -55°C to 150°C, offering versatility for diverse industrial and commercial applications. The component complies with RoHS directives, underscoring its manufacture with environmentally friendly materials. Vishay SI2325DS-T1-E3 is particularly suited for high-voltage load switching in power rails, level-shift circuits where P-channel devices are essential, battery protection schemes, reverse-polarity circuits, and compact surface-mount power-management boards.
Compact 3-pin SOT-23 package for space-saving PCB layouts. Enhancement mode transistor design for controlled switching. High voltage capability with -150 V drain-source rating. Low on-resistance enhancing conduction efficiency.
Wide operational temperature tolerance for rugged use. Low gate charge facilitating faster switching speeds. RoHS compliant ensuring environmental safety. Ideal for low-power signal switching and power management circuits.
Not rated for automotive-level standards.
This MOSFET is a critical component in industrial electronics, power management systems, and consumer electronic devices, offering a reliable solution for efficient switching with compact form factor and broad operating conditions. Browse our extensive selection for more Vishay MOSFETs suited for varying technical requirements.
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