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DiodesZetex N-Channel MOSFET, 100 V, 91 A Continuous Drain Current, 8-Pin PowerDI5060 Package DMTH10H009LPSQ-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 6.15mm |
| Model | DMTH10H009LPSQ-13 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | DMTH10H009LPSQ |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 91A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET operates with enhancement channel mode for robust switching performance.
- It supports a maximum power dissipation of 1.5 W, suitable for automotive-grade temperature ranges.
- The device features a low on-resistance Rds of 800 mΩ aiding in efficient power management.
- Designed for surface mount applications, it has compact dimensions of 6.15 mm length, 5.15 mm width, and 1 mm height.
- The maximum gate-source voltage rating is 20 V, with a forward voltage of 1.2 V.
- The operating temperature range spans from -55°C minimum to a maximum of 175°C for high reliability.
- Ideal for automotive and industrial power electronics applications requiring fast switching speed.
Product Description
DiodesZetex DMTH10H009LPSQ-13 is a high-performance N-Channel MOSFET engineered for demanding automotive and industrial applications. It provides a continuous drain current rating of 91 A and can handle voltages up to 100 V, making it suitable for power control and switching circuits.
This device is packaged in an 8-pin PowerDI5060 surface-mount package that offers efficient thermal management and compact footprint design, supporting modern PCB layouts.
The MOSFET's enhancement channel mode and low 800 mΩ maximum drain-source resistance (Rds) contribute to reduced conduction losses and enhanced energy efficiency. It also supports a gate-source voltage of up to 20 V which is optimal for fast and reliable switching.
The device’s capability to operate in temperatures from -55°C to 175°C ensures robust performance under harsh automotive and industrial environments. It has a maximum power dissipation of 1.5 W, suitable for medium-power circuits.
This MOSFET operates with enhancement channel mode for robust switching performance. It achieves maximum continuous drain current of 91 A for high current handling. The package type PowerDI5060 ensures ease of surface mounting and effective heat dissipation.
Operating temperature range from -55°C to 175°C supports automotive and industrial use. Features low maximum drain-source resistance of 800 mΩ to minimize power loss.
This product is ideal for power management, motor drives, and automotive electronic systems where reliability and efficiency are critical. Engineers can leverage this MOSFET for developing advanced power electronics modules and semiconductor devices.
Explore more products like this in the Power MOSFET category at EnvMart to find complementary components for your applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 91 A, allowing it to handle high current applications effectively.
This MOSFET can handle a maximum drain-source voltage of 100 V, making it suitable for various power control applications.
The dimensions of the PowerDI5060 package are 6.15 mm in length, 5.15 mm in width, and 1 mm in height.
The maximum power dissipation for this model is 1.5 W, which is suitable for medium-power circuits.
The operating temperature range for this MOSFET spans from -55°C to 175°C, ensuring reliable performance in harsh environments.
The maximum gate-source voltage rating for this model is 20 V, which is optimal for fast and reliable switching.
This model features a low maximum drain-source resistance (Rds) of 800 mΩ, aiding in efficient power management.
This device operates with an enhancement channel mode, which provides robust switching performance.
The DMTH10H009LPSQ-13 has a pin count of 8, suitable for surface mount applications.
This model is ideal for automotive and industrial power electronics applications requiring fast switching speed and efficiency.
The country of origin for this MOSFET is India.
The forward voltage for this MOSFET is 1.2 V, which is relevant for its operation in circuits.
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