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DiodesZetex N-Channel MOSFET 2.7 A 30 V Enhancement Mode 3-Pin SOT-323 DMN3061SW-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model DMN3061SW-7
Width 1.35mm
Mount Type Surface
Series DMN3061SW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 2.7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.65W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Surface mount device in a compact 3-pin SOT-323 package.
  • Enhancement mode with low drain-source resistance of 600 milliohms.
  • High maximum power dissipation rating of 0.65 watts.
  • Wide operating temperature range from -55°C to 150°C for reliable performance.
  • Typical gate charge of 3.5 nC for fast switching speed.
  • Maximum gate-source voltage of 20 V ensuring robust gate control.
  • Designed with automotive standard AEC-Q101 for quality assurance.
  • Extremely low forward voltage drop of 1 volt maximizing efficiency.

Product Description

DiodesZetex DMN3061SW-7 is a high-performance N-Channel MOSFET designed for general-purpose interfacing, power management functions, and analog switching applications. This enhancement mode MOSFET operates with a maximum continuous drain current of 2.7 A and can tolerate drain-source voltages up to 30 V. The device comes in a compact 3-pin SOT-323 surface mount package, ideal for space-constrained electronic circuits.

Its low drain-source resistance of 600 milliohms minimizes conduction losses, improving overall circuit efficiency. The maximum power dissipation rating of 0.65 watts allows reliable operation under moderate load conditions. The typical gate charge of 3.5 nC enables fast switching, making this MOSFET suitable for high-speed electronic applications.

Operating reliably in harsh environments, this device supports an operating temperature range from -55°C to 150°C. The maximum gate-source voltage rating of 20 V ensures durable gate control under various operating conditions. Additionally, the DMN3061SW-7 complies with the automotive AEC-Q101 standard, demonstrating quality and reliability for automotive or industrial use cases.

Surface mount 3-pin SOT-323 package for easy PCB integration. Low input capacitance for improved switching performance. Enhancement mode channel with high switching speed. Suitable for power management and analog switching in industrial and automotive electronics.

Reliable operation across wide temperature ranges. Compliance with automotive quality standards (AEC-Q101).

This N-Channel MOSFET is ideal for electronics manufacturing, power supply modules, automotive circuit designs, and industrial instrumentation. Discover more precision MOSFETs and semiconductors in our Electronics & Electricals catalog on EnvMart.

DiodesZetex N-Channel MOSFET 2.7 A 30 V Enhancement Mode 3-Pin SOT-323 DMN3061SW-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.7 A.

It can tolerate a maximum drain-source voltage of 30 V.

The typical gate charge is 3.5 nC, which enables fast switching.

It operates reliably within a temperature range from -55°C to 150°C.

This model comes in a compact 3-pin SOT-323 surface mount package.

The maximum power dissipation rating is 0.65 watts.

It has a low drain-source resistance of 600 milliohms.

This model complies with the automotive standard AEC-Q101.

The forward voltage drop is 1 volt, which maximizes efficiency.

The height of this model is 1.1 mm.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

It features an enhancement mode N-channel configuration.

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