DiodesZetex N-Channel Enhancement Mode MOSFET 14.8 A, 60 V, SO-8 Package DMT67M8LSS-13

The DiodesZetex DMT67M8LSS-13 is a high-performance N-Channel enhancement mode MOSFET designed for efficient power management and switching applications. Rated for a maximum continuous drain current of 14.8 amperes and with a drain-source voltage of 60 volts, this device is engineered to deliver reliable performance in compact electronic assemblies.

Encapsulated in a surface mount SO-8 package, the device features a low on-resistance of 6.6 milliohms, which facilitates minimal conduction losses and improved thermal management. It supports a maximum power dissipation of 2.2 watts, suitable for battery-powered systems, power supplies, and solid-state relay circuits.

This MOSFET operates effectively across a broad temperature range from -55°C to 150°C, making it well-suited for industrial, automotive, and consumer electronics applications where thermal reliability is critical. The 8-pin design offers easy integration on printed circuit boards with surface mount technology.

Key technical aspects include a maximum gate-source voltage of 20 V and a forward voltage rating of 1.2 V, supporting efficient switching and low voltage drop. Its precise dimensions with a length of 4.9 mm, width of 3.85 mm, and height of 1.45 mm enable dense PCB layouts without compromising performance.

This MOSFET is ideal for use in electronic, power management, and semiconductor industrial segments, contributing to energy-efficient system designs. It is compliant with common industrial standards, although not specifically certified for automotive standards.

This MOSFET features an enhancement mode channel type optimized for power management. It has a maximum drain-source resistance of 6.6 milliohms for efficient conduction. The device supports a maximum power dissipation of 2.2 watts within its compact dimensions.

Operating temperature ranges from -55°C to a maximum of 150°C ensure wide applicability. Designed for surface mount applications with an 8-pin configuration. The maximum gate-source voltage tolerance is 20 V, suitable for various switching circuits.

Forward voltage is rated at 1.2 V, ensuring low voltage drop during operation. Its dimensions measure 4.9 mm in length, 3.85 mm in width, and 1.45 mm in height. Explore the DiodesZetex DMT67M8LSS-13 MOSFET to enhance your electronic and power management projects. Browse additional semiconductor devices and MOSFET variants at EnvMart.