DiodesZetex Dual N-Channel MOSFET 6 A 100 V Enhancement 12-Pin VDFN DMHT10H032LFJ

The DiodesZetex DMHT10H032LFJ is a dual N-channel MOSFET designed for industrial and automotive applications requiring efficient power switching. Packaged in a compact 12-pin VDFN surface mount format, it delivers a maximum continuous drain current of 6 A and a drain-source voltage rating of 100 V, making it suitable for medium-power circuits.

This device operates in enhancement mode and features a low typical gate charge (6.3 nC at Vgs), enabling fast switching speeds that contribute to high conversion efficiency and reduced heat generation.

Rated for power dissipation up to 64 W and operating temperatures from -55°C to 150°C, the DMHT10H032LFJ ensures stable performance across harsh environments. With a very low on-resistance of 0.033 Ω, it minimizes conduction losses, benefiting battery-powered and automotive systems.

Designed for dual transistor configurations typically used in H-bridge circuits, this MOSFET supports motor control, power management, and DC-DC conversion tasks in industrial, automotive, and commercial electronics sectors.

The product conforms to multiple automotive and international quality standards including AEC-Q100, AEC-Q200, AEC-Q101, RoHS compliance, UL 94V-0, MIL-STD-202, and J-STD-020, assuring reliability and safety in demanding applications. Its compact dimensions of 5 mm length, 4.5 mm width, and 0.8 mm height make it suitable for densely packed PCB implementations.

Designed in a 12-pin VDFN package suitable for surface mounting. Enhancement mode transistor with low typical gate charge of 6.3 nC. Maximum power dissipation of 64 W supports robust operation. Wide operating temperature range from -55°C to 150°C ensures reliability.

Fast switching speed ideal for high efficiency applications. Built to automotive-grade standards with AEC-Q100, AEC-Q200, and AEC-Q101 certifications. Low drain-source resistance (Rds) of 0.033 Ω reduces power losses. Forward voltage drop Vf of 0.8 V for efficient conduction.

Transistor configured in dual H-bridge layout for versatile use. Meets international standards including RoHS, UL 94V-0, MIL-STD-202, and J-STD-020.

This high-performance dual N-channel MOSFET is ideal for industrial, automotive, power management, and consumer electronics applications requiring efficient switching and reliable operation in compact package formats. Explore more semiconductors and MOSFETs to suit your design needs at EnvMart.