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Vishay P-Channel Enhancement MOSFET, 8 A Continuous Drain Current, 30 V Drain-Source Voltage, TSOP-6 Surface SQ3495EV-T1_GE3

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Vishay P-Channel Enhancement MOSFET, 8 A Continuous Drain Current, 30 V Drain-Source Voltage, TSOP-6 Surface SQ3495EV-T1_GE3

Name: Vishay P-Channel Enhancement MOSFET, 8 A Continuous Drain Current, 30 V Drain-Source Voltage, TSOP-6 Surface SQ3495EV-T1_GE3
Brand: Vishay
SKU: 284025
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.1mm
Length	3.1mm
Model	SQ3495EV-T1_GE3
Width	1.7mm
Mount Type	Surface
Series	SQ3495EV
Maximum Operating Temperature	150°C
Package Type	TSOP
Minimum Operating Temperature	-55°C
Pin Count	6
Channel Type	Type P
Maximum Continuous Drain Current Id	8A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	17mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	41nC
Maximum Gate Source Voltage Vgs	12V
Forward Voltage Vf	-1.2V

Key Features

The 6-pin TSOP surface mount package enables compact PCB design.
The device operates in enhancement mode for reliable switching performance.
Maximum drain-source resistance is a low 17 milliohms to minimize conduction losses.
Supports maximum power dissipation of 5 W with operating temperatures up to 150°C.
Typical gate charge is 41 nC at gate-source voltage, ensuring efficient gate drive.
Wide operating temperature range from -55°C to 150°C for demanding environments.
Maximum gate-source voltage rating is ±12 V for robust gate control.
Forward voltage drop is rated at -1.2 V for reducing power loss in conduction.

Product Description

Vishay SQ3495EV-T1_GE3 is a P-Channel enhancement mode MOSFET designed for discrete semiconductor applications requiring reliable power switching. It features a maximum continuous drain current rating of 8 A and a maximum drain-source voltage of 30 V, enabling efficient control of power in electronic circuits.

The device utilizes a TSOP-6 surface-mount package, providing a compact form factor with dimensions of 3.1 mm length, 1.7 mm width, and 1.1 mm height, suitable for high-density PCB designs.

With a maximum drain-source resistance of 17 milliohms, this MOSFET ensures minimal power loss during conduction, thereby improving overall energy efficiency. The device supports a maximum power dissipation of 5 W with a robust maximum operating temperature of 150°C, allowing it to withstand demanding industrial environments.

The typical gate charge of 41 nC at the specified gate-source voltage contributes to efficient switching performance, while the maximum gate-source voltage rating of ±12 V ensures safe gate drive operation. The MOSFET’s forward voltage drop is specified at -1.2 V to reduce conduction losses further.

This component operates reliably across a wide temperature range from -55°C to 150°C and does not conform to any automotive standard. The absence of any specific industry approvals indicates its general-purpose semiconductor classification.

Applications for this MOSFET include industrial power management, electronic component switching, and other discrete semiconductor uses in electronics manufacturing and assembly. The 6-pin TSOP package provides space-efficient mounting on PCBs.

Low Rds(on) resistance to maximize electrical efficiency. Wide temperature range accommodates harsh operating environments. Enhancement mode operation ensures predictable switching. RoHS compliant construction supports environmental regulations.

Explore additional Vishay MOSFETs and discrete semiconductors on EnvMart for comprehensive industrial electronics solutions.