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Toshiba N-Channel MOSFET 150 A, 40 V, Enhancement Mode, 8-Pin SOP TPHR8504PL,L1Q(M
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 900μm |
| Length | 6mm |
| Model | TPHR8504PL,L1Q(M |
| Width | 5mm |
| Mount Type | Surface |
| Series | TPHR8504PL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 103nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-speed switching properties suitable for efficient electronic applications.
- Surface mount 8-pin SOP package for compact PCB design.
- Low drain-source on-resistance of 2.4 Ω enhancing power efficiency.
- Maximum power dissipation of 170W supports robust operation.
- Operating temperature range from -55°C to 150°C ensures reliability in harsh conditions.
- Enhancement mode channel with typical gate charge of 103nC at Vgs.
- Maximum gate-source voltage rated at 20 V for safe gate control.
Product Description
Toshiba TPHR8504PL,L1Q(M is an N-Channel MOSFET designed for high efficiency and high-performance electronic circuits, featuring a maximum continuous drain current of 150 A and a maximum drain-source voltage of 40 V. This enhancement mode MOSFET comes in an 8-pin SOP surface mount package, making it suitable for compact PCB layouts in industrial and commercial electronics.
The device offers a low drain-source resistance of 2.4 Ω, which leads to reduced power losses and improved energy efficiency in applications such as DC-DC converters, switching voltage regulators, and motor drivers. It can dissipate up to 170 W of power, ensuring robust functionality even under demanding electrical loads.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for use in harsh environments including automotive and industrial systems. The typical gate charge of 103 nC at Vgs and the maximum gate-source voltage of 20 V allow for precise gate control and stable switching performance.
Its physical dimensions are compact, with a length of 6 mm, width of 5 mm, and a height of 900 μm, facilitating integration into space-constrained designs. The device does not carry specific standards or automotive certifications but is engineered for high-speed switching and power management in electronic components.
Applications include industrial control circuits, power management in electronics manufacturing, and motor driving systems in commercial equipment. The Toshiba TPHR8504PL,L1Q(M MOSFET is built to deliver enhanced performance for high-current switching with excellent thermal and electrical stability.
High-speed switching properties suitable for efficient electronic applications. Surface mount 8-pin SOP package for compact PCB design. Low drain-source on-resistance of 2.4 Ω enhancing power efficiency. Maximum power dissipation of 170W supports robust operation.
Operating temperature range from -55°C to 150°C ensures reliability in harsh conditions. Enhancement mode channel with typical gate charge of 103nC at Vgs. Maximum gate-source voltage rated at 20 V for safe gate control.
Compact physical dimensions: length 6 mm, width 5 mm, height 900 μm. Explore more products in the MOSFET category at EnvMart for high-quality electronic components and power management devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at Vgs for this unit is 103 nC.
The maximum power dissipation for this MOSFET is 170 W.
It operates within a temperature range of -55°C to 150°C.
The drain-source on-resistance is 2.4 Ω, which enhances power efficiency.
The physical dimensions are 6 mm in length, 5 mm in width, and 900 μm in height.
It comes in an 8-pin SOP surface mount package.
The maximum gate-source voltage rated for this model is 20 V.
This MOSFET is suitable for applications such as DC-DC converters, switching voltage regulators, and motor drivers.
It utilizes an N-channel type, which is designed for enhancement mode operation.
The forward voltage for this MOSFET is -1.2 V.
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