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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 570μm |
| Length | 1.95mm |
| Model | DMP6110SFDFQ-7 |
| Width | 1.95mm |
| Mount Type | Surface |
| Series | DMP6110 |
| Maximum Operating Temperature | 150°C |
| Package Type | UDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 0.76W |
| Typical Gate Charge Qg @ Vgs | 17.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMP6110SFDFQ-7 is a P-Channel enhancement mode MOSFET designed specifically to meet stringent automotive requirements including power management and battery management applications.
This component supports a maximum continuous drain current of 4.2 A, and a drain-source voltage of 60 V, making it ideal for moderate power electronic circuits. Its compact 6-pin UDFN surface mount package with dimensions of 1.95 mm length, 1.95 mm width, and 570 μm height supports high-density PCB layouts and automated assembly.
The device is characterized by a low maximum drain-source resistance of 130 mΩ which effectively reduces conduction losses during operation, contributing to improved power efficiency.
The MOSFET is capable of operating across a wide temperature range from -55°C to 150°C while dissipating a maximum power of 0.76 W, maintaining reliability under automotive environmental conditions.
With a typical gate charge of 17.2 nC at the test gate voltage, the device delivers fast switching with low input capacitance, beneficial for minimizing switching losses in power circuits.
The product meets the AEC-Q101 standard, affirming compliance with automotive quality and reliability requirements, and is supported by a Production Part Approval Process (PPAP).
This makes it an excellent choice for industrial, automotive electronics, power management, and battery management system manufacturing, where performance and reliability are critical.
This MOSFET features a maximum continuous drain current of 4.2 A. It supports a maximum drain-source voltage of 60 V and a gate-source voltage up to 20 V. Packaging is in a 6-pin UDFN surface mount package. Maximum power dissipation is 0.76 W and operates between -55°C to 150°C.
Low drain-source resistance of 130 mΩ minimizes power losses. Typical gate charge is 17.2 nC, ensuring efficient switching. Highly suitable for battery management and power management functions. Qualified to the AEC-Q101 automotive standard for reliability.
Explore the semiconductor category on EnvMart for a wide range of power and discrete semiconductor components from trusted brands like DiodesZetex.
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