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DiodesZetex N-Channel Enhancement Mode MOSFET 400 mA 60 V 3-Pin SOT-323 DMN62D0UWQ-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 900μm
Length 2mm
Model DMN62D0UWQ-7
Width 1.8mm
Mount Type Surface
Series DMN62
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 400mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 3Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 320mW
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • Designed to meet stringent automotive requirements with AEC-Q101 qualification.
  • Maximum continuous drain current of 400 mA ensures reliable load handling.
  • Low on-resistance for efficient switching performance.
  • Maximum power dissipation rated at 320 mW supporting compact applications.
  • Supports a wide operating temperature range from -55°C up to 150°C.
  • Typical gate charge of 0.5 nC at specified gate-source voltage for fast switching.
  • Maximum gate-source voltage of 20 V allows robust gate control.
  • Compact form factor with dimensions 2 mm × 1.8 mm × 900 μm suitable for surface mount.

Product Description

DiodesZetex DMN62D0UWQ-7 is a high-performance N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 400 mA and a maximum drain-source voltage of 60 V. Enclosed in a compact 3-Pin SOT-323 surface mount package, it offers low on-resistance and low input capacitance that optimize electrical efficiency and fast switching.

Designed specifically for demanding automotive applications, this MOSFET meets the AEC-Q101 automotive standard and is backed by Production Part Approval Process (PPAP) certification. It operates reliably within a wide temperature range of -55°C to 150°C, suitable for harsh environments and industrial use.

With a typical gate charge of 0.5 nC at specified gate-source voltage and a maximum gate-source voltage rating of 20 V, the DMN62D0UWQ-7 ensures responsive and safe gate drive control. Its forward voltage rating of 1.3 V further improves efficiency in current conduction applications.

Automotive-grade MOSFET suitable for motor control and backlighting. Compliant with AEC-Q101 for automotive reliability. Compact footprint with 2 mm length, 1.8 mm width, and 900 μm height. Enhancement mode operation for controlled switching.

Supports continuous drain current up to 400 mA. Maximum power dissipation of 320 mW optimized for small form factor use. Wide temperature operating range from -55°C to 150°C. Low gate charge for fast switching performance.

This MOSFET is ideal for use in industrial, automotive, and electronics manufacturing sectors where efficient power switching and control are critical. Its surface mount design facilitates compact assembly in printed circuit boards (PCBs) used in electronic devices.

Explore EnvMart's range of semiconductor components including MOSFETs for specialized electronic applications and automotive solutions.

DiodesZetex N-Channel Enhancement Mode MOSFET 400 mA 60 V 3-Pin SOT-323 DMN62D0UWQ-7
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Frequently Asked Questions

The maximum continuous drain current for the DMN62D0UWQ-7 is 400 mA.

This model has a maximum drain-source voltage rating of 60 V.

The DMN62D0UWQ-7 is enclosed in a SOT-323 package with dimensions of 2 mm in length, 1.8 mm in width, and 900 μm in height.

It operates within a wide temperature range from -55°C to 150°C.

The typical gate charge at the specified gate-source voltage is 0.5 nC.

The maximum power dissipation rated for the DMN62D0UWQ-7 is 320 mW.

This model complies with the AEC-Q101 automotive standard.

The forward voltage rating is 1.3 V.

The maximum gate-source voltage for this model is 20 V.

The DMN62D0UWQ-7 features an N-channel type and operates in enhancement mode.

This MOSFET has a total of 3 pins.

The maximum drain-source resistance for this model is 3 Ω.

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