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DiodesZetex PowerDI3333 8-Pin N-Channel Enhancement Mode MOSFET 14 A 30 V DMG7430LFGQ-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 750μm |
| Length | 3.25mm |
| Model | DMG7430LFGQ-7 |
| Width | 3.25mm |
| Mount Type | Surface |
| Series | DMG7430 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 14 amps.
- It withstands a maximum drain-source voltage of 30 volts.
- The package ensures thermal efficiency in a small form factor.
- Low on-resistance of 15 milliohms minimizes power loss during operation.
- Operates within a temperature range from -55°C to 150°C, compliant with AEC-Q101 automotive standard.
- Typical gate charge is 26 nanocoulombs at standard gate-source voltage.
- The device features an enhancement mode channel for switching power applications.
- Designed for surface mount with an 8-pin configuration.
Product Description
DiodesZetex DMG7430LFGQ-7 is a PowerDI3333 package N-Channel MOSFET in an 8-pin configuration. It is engineered for demanding automotive and industrial power applications requiring high current capacity and low conduction losses. This device supports a maximum continuous drain current of 14 amperes and a maximum drain-source voltage of 30 volts, ensuring reliable switching performance.
The MOSFET features a low drain-source resistance (Rds(on)) of 15 milliohms which helps minimize energy losses and heat dissipation during operation. It operates within a broad temperature range, from -55°C minimum to 150°C maximum, and is qualified to meet AEC-Q101 automotive standards. The typical gate charge is 26 nanocoulombs at the specified gate voltage providing fast switching capabilities.
The small, thermally efficient PowerDI3333 package enables compact surface mounting on printed circuit boards, making it ideal for power management modules in automotive motor control, power supplies, and other industrial environments.
Additional product features include an enhancement mode channel type for efficient power switching, a forward voltage drop of 1 volt ensuring effective conduction, and a mounting style optimized for surface mounting applications.
The device is manufactured in China and is suitable for various industrial, automotive, laboratory, and manufacturing uses requiring robust discrete MOSFET functionality. This MOSFET supports a maximum continuous drain current of 14 amps.
It withstands a maximum drain-source voltage of 30 volts. Low Rds(on) of 15 milliohms reduces power dissipation. Temperature operation range is -55°C to 150°C, compliant to AEC-Q101. Typical gate charge of 26 nC facilitates fast switching.
Enhancement mode channel for efficient switching. 8-pin PowerDI3333 surface mount package. Forward voltage of 1 volt for efficient conduction. Compact thermally efficient design ideal for automotive and industrial use. Manufactured in China with automotive quality standards.
Browse a wide range of MOSFETs and discrete semiconductor components at EnvMart for your electronic and industrial applications.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 14 amperes.
It can withstand a maximum drain-source voltage of 30 volts.
The device features a low drain-source resistance (Rds(on)) of 15 milliohms, which minimizes power loss during operation.
This MOSFET operates within a temperature range from -55°C to 150°C.
The typical gate charge is 26 nanocoulombs at the specified gate-source voltage.
It is packaged in a PowerDI3333 type with an 8-pin configuration for surface mounting.
It is compliant with the AEC-Q101 automotive standard.
The forward voltage drop is 1 volt, ensuring effective conduction.
The dimensions are 3.25 mm in length and width, with a height of 750 μm.
It has a maximum power dissipation capability of 1.5 watts.
This device features an enhancement mode channel type for efficient power switching.
This MOSFET is manufactured in China.
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