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Toshiba N-Channel MOSFET 42 A 120 V Enhancement Mode 3-Pin TO-220 TK42A12N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK42A12N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 9.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.7V |
Key Features
- Supports a maximum continuous drain current of 42 amperes.
- Operates at a maximum drain-source voltage of 120 volts.
- Packaged in a TO-220 through-hole mount form factor with 3 pins.
- Features a low drain-source resistance of 9.4 milliohms for efficient conduction.
- Capable of dissipating up to 35 watts of power.
- Typical gate charge is 52 nanocoulombs at specified gate voltage.
- Operates safely up to a maximum temperature of 150 degrees Celsius.
- Forward voltage drop is approximately -1.7 volts.
Product Description
Toshiba TK42A12N1,S4X(S is a high-performance N-Channel enhancement mode MOSFET transistor designed for power switching applications demanding continuous current capability of 42 amperes and drain-source voltage rating of 120 volts.
This device comes in a widely used TO-220 package with a through-hole mount style, featuring 3 pins for easy integration into electronic circuits.
With a low drain-source resistance of 9.4 milliohms, it provides efficient conduction minimizing power loss and heat generation, supported by a maximum power dissipation of 35 watts.
The typical gate charge of 52 nanocoulombs at a specific gate voltage value ensures fast switching performance, suitable for industrial and commercial power electronics. This MOSFET operates reliably at temperatures up to 150 degrees Celsius, making it suitable for demanding operational environments.
The device’s electrical characteristics include a maximum gate-source voltage range of -20 to +20 volts and a forward voltage drop of approximately -1.7 volts.
Although not specifically designed for automotive standards, it is ideal for industrial, consumer electronics, and power supply applications requiring robust semiconductor switching components.
The product is manufactured in China and represents Toshiba’s quality semiconductor component line. Maximum continuous drain current: 42A. Drain source voltage rating: 120V. Package type: TO-220 with through-hole mount. Low ON resistance: 9.4 milliohms.
Power dissipation capability: 35W. Typical gate charge: 52nC. Operating temperature max: 150°C. Gate source voltage range: -20 to +20V. Forward voltage: -1.7V. Pin count: 3. Explore more semiconductor components and MOSFET options at EnvMart to meet varied industrial and electronic design requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 42 amperes.
This MOSFET operates at a maximum drain-source voltage of 120 volts.
It is packaged in a TO-220 form factor with a through-hole mount style.
The typical gate charge at specified gate voltage is 52 nanocoulombs.
This MOSFET can dissipate up to 35 watts of power.
The maximum operating temperature is 150 degrees Celsius.
The forward voltage drop is approximately -1.7 volts.
The dimensions are 10mm in length, 4.5mm in width, and 15mm in height.
It features a low drain-source resistance of 9.4 milliohms.
The maximum gate-source voltage range is -20 to +20 volts.
It utilizes an N-channel enhancement mode.
This model is manufactured in China.
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