Infineon OptiMOS 3 N-Channel MOSFET 45 A 100 V Enhancement 3-Pin TO-220 IPA086N10N3GXKSA1

Infineon IPA086N10N3GXKSA1 is an OptiMOS 3 series N-Channel MOSFET delivering a continuous drain current of 45 amperes and a maximum drain-source voltage of 100 volts. Housed in a thermally efficient 3-pin TO-220 package, the device offers exceptional power management capabilities suitable for industrial, electronic, and automation applications.

Designed to operate in harsh environments, this MOSFET supports an operating temperature range from -55°C to +175°C, ensuring reliability under thermal stress. The low on-resistance of 15.4 milliohms reduces conduction losses, enhancing overall energy efficiency and minimizing heat generation during operation.

The device utilizes an enhancement mode channel for precise switching and control, with a typical gate charge of 42nC supporting high-frequency switching applications. The MOSFET’s forward voltage of 1.2 volts and maximum power dissipation rating of 37.5 watts enable it to handle substantial loads while preserving efficiency.

This product features a fully isolated TO-220 package for improved safety and heat dissipation. It is intended for through-hole mounting, facilitating secure connection to printed circuit boards and optimal thermal management.

Applications include high-frequency switching circuits, synchronous rectification for power supplies, and power management in industrial and commercial electronic systems. Its robust design benefits automotive and industrial electronic environments demanding high current handling with reliable thermal performance.

Features N-channel enhancement mode for optimal current control. Supports maximum continuous drain current of 45 amperes. Maximum drain-source voltage rating of 100 volts ensures robust operation. Low on-resistance of 15.4 milliohms reduces power loss and heat generation.

Rated for maximum power dissipation of 37.5 watts to support high power applications. Operates reliably in temperatures from -55°C up to 175°C. Typical gate charge of 42 nanocoulombs enables fast switching performance. Fully isolated TO-220 package improves safety and heat management.

Designed for through-hole mounting ensuring easy PCB integration. Forward voltage drop of 1.2 volts provides efficient conduction characteristics. Explore more high-quality MOSFETs and power management solutions on EnvMart for your electronic design and industrial needs.