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Toshiba N-Channel Enhancement MOSFET, Maximum Drain Current 11.1 A, Drain-Source Voltage 650 V, 3-Pin TO-220 TK11A65W,S5X(M
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK11A65W,S5X(M |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.1A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 390mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Enhancement channel mode ensures reliable switching performance.
- Maximum continuous drain current rating of 11.1 A supports high load demands.
- 650 V maximum drain-source voltage suitable for power applications.
- Compact TO-220 package with through-hole mounting for easy PCB integration.
- Low maximum drain-source resistance of 390 mΩ enhances efficiency.
- Maximum power dissipation of 35 W allows for sustained operation.
- Operating temperature up to 150°C for robust thermal stability.
- Typical gate charge of 25 nC ensures fast switching speeds.
Product Description
Toshiba TK11A65W,S5X(M is a N-Channel Enhancement MOSFET designed for use in a variety of power electronics and semiconductor applications. It offers a maximum continuous drain current of 11.1 A and a drain-source voltage rating of 650 V, delivered in a compact TO-220 three-pin package suitable for through-hole mounting.
This MOSFET provides a maximum power dissipation of 35 W and operates reliably at temperatures up to 150°C, making it ideal for industrial, automotive electronics, and power supply designs. The device's low drain-source resistance of 390 milliohms reduces conduction losses, enhancing efficiency in switching applications.
The typical gate charge of 25 nC at Vgs guarantees rapid switching performance, while the forward voltage of -1.7 V supports effective current conduction. This component is manufactured in Malaysia, conforming to Toshiba's quality and reliability standards.
Enhancement channel mode ensures reliable switching performance. Maximum continuous drain current rating of 11.1 A supports high load demands. 650 V maximum drain-source voltage suitable for power applications. Compact TO-220 package with through-hole mounting for easy PCB integration.
Low maximum drain-source resistance of 390 mΩ enhances efficiency. Maximum power dissipation of 35 W allows for sustained operation. Operating temperature up to 150°C for robust thermal stability. Typical gate charge of 25 nC ensures fast switching speeds.
Forward voltage of -1.7 V supports effective conduction. Manufactured in Malaysia with quality assurance.
This MOSFET is well suited for industrial power management, consumer electronics, and automotive systems requiring efficient high voltage and current control. It supports through-hole PCB assembly, simplifying integration and repair.
Explore Toshiba MOSFET selection on EnvMart for industry-leading power semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.1 A, suitable for high load demands.
This MOSFET has a maximum drain-source voltage rating of 650 V, making it suitable for power applications.
It comes in a compact TO-220 package with a through-hole mounting style for easy PCB integration.
The maximum power dissipation for this MOSFET is 35 W, allowing for sustained operation in various applications.
The typical gate charge at Vgs is 25 nC, which ensures fast switching speeds.
This MOSFET can operate at a maximum temperature of 150°C, providing robust thermal stability.
The maximum drain-source resistance for this model is 390 mΩ, which enhances efficiency in switching applications.
The forward voltage of this MOSFET is -1.7 V, supporting effective current conduction.
This model features a 3-pin configuration, suitable for various circuit designs.
It utilizes an N-channel enhancement mode, ensuring reliable switching performance.
This component is manufactured in Malaysia, conforming to Toshiba's quality and reliability standards.
The maximum gate-source voltage for this MOSFET is -30 V to +30 V, allowing for flexible circuit integration.
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