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Toshiba TK N-Channel MOSFET 207 A 100 V Enhancement Mode 3-Pin TO-220 TK100A10N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK100A10N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 207A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Operates in enhancement mode for efficient switching applications.
- Features a through-hole mount type with three pins for easy integration.
- Has a maximum drain-source resistance of 3.8 milliohms for low conduction losses.
- Typical gate charge is 140 nC at rated gate-source voltage, supporting fast switching speeds.
- Maximum power dissipation is 45 W, suitable for high-power circuits.
- Can withstand gate-source voltages from -20 V to +20 V, ensuring reliability.
- Forward voltage drop is approximately -1.2 V under operating conditions.
- Designed for operation up to 150°C maximum temperature for robust performance.
Product Description
Toshiba TK100A10N1,S4X(S is a high-performance N-Channel MOSFET designed for power switching applications requiring a continuous drain current of up to 207 A and a maximum drain-source voltage of 100 V. This device is housed in a TO-220 package with a through-hole mount type and a 3-pin configuration, making it suitable for various industrial electronics including power management circuits, motor control, and power supply units.
Operating in enhancement mode, this MOSFET features a maximum drain-source resistance of just 3.8 milliohms, which reduces power losses during conduction. The typical gate charge of 140 nC at gate-source voltage enhances switching efficiency, enabling high-speed operations. Its power dissipation rating of 45 W supports medium to high power loads while the device tolerates gate-source voltages between -20 V and +20 V, ensuring high reliability and protection against gate voltage stress.
With thermal stability up to 150°C, this MOSFET is robust for demanding environments. The compact dimensions of 10 mm length, 15 mm height, and 4.5 mm width facilitate integration into tight PCB layouts. The component is manufactured in China and is supplied new, assuring quality and compliance.
This MOSFET is an ideal choice for applications in industrial electronics, power conversion systems, energy management, HVAC controls, manufacturing automation, and other commercial electronics usage. Its through-hole package supports durable mounting, beneficial for prototype and mass production environments.
Operates with high continuous current capacity and low resistance. Supports high voltage switching with stable gate control. Compact TO-220 package for efficient PCB integration. Suitable for industrial, commercial, and manufacturing use cases.
Robust thermal rating for reliable high-temperature operation. Designed for long-term performance in power electronics. Meets standard electronic component quality requirements. Explore more products in the MOSFET category to find suitable components for diverse electronic and power management needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 207 A.
It can handle a maximum drain-source voltage of 100 V.
The typical gate charge at the rated gate-source voltage is 140 nC.
The maximum power dissipation rating is 45 W.
The maximum operating temperature for this device is 150°C.
The maximum drain-source resistance is 3.8 milliohms.
This model uses a TO-220 package type.
The dimensions are 10 mm in length, 15 mm in height, and 4.5 mm in width.
It can withstand gate-source voltages ranging from -20 V to +20 V.
This model supports a through-hole mount type for easy integration.
It operates in enhancement mode.
This MOSFET is suitable for power management circuits, motor control, and power supply units among other industrial electronics applications.
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