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Vishay EF Series N-Channel Enhancement MOSFET, 19 A Max Drain Current, 600 V Max Drain Source Voltage SIHA22N60EF-GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 15.3mm
Length 10.3mm
Model SIHA22N60EF-GE3
Width 4.7mm
Mount Type Through Hole
Series EF
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 19A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 0.182Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 33W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • The MOSFET offers a low figure-of-merit (FOM) combining Ron and Qg for efficient switching performance.
  • It has low input capacitance (Ciss) resulting in reduced switching and conduction losses.
  • Designed for power applications including server and telecom power supplies.
  • Operates reliably within a wide temperature range from -55°C to 150°C.
  • Maximum power dissipation is rated at 33 W for robust thermal handling.
  • Forward voltage drop is 1.2 V ensuring efficient current flow in conduction state.
  • Maximum gate-source voltage is 30 V, supporting high-voltage driving conditions.
  • Typical gate charge is 48 nC at rated gate-source voltage assisting fast switching.

Product Description

Vishay SIHA22N60EF-GE3 is a Power MOSFET from the EF series, featuring an N-Channel enhancement mode operation with a maximum continuous drain current of 19 A and maximum voltage rating of 600 V. Packaged in a TO-220 3-pin form factor, it is designed for through-hole mounting, facilitating convenient assembly in industrial power electronics.

This MOSFET is optimized for low switching and conduction losses due to its low figure-of-merit (RON x QG) and low input capacitance. It supports a broad operating temperature range from -55°C to 150°C, making it suitable for demanding environments.

Typical applications include server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) power supplies where efficient and reliable switching is critical.

The device features a maximum power dissipation rating of 33 W and a forward voltage of 1.2 V, ensuring robust performance under load. The maximum gate-source voltage is 30 V with a typical gate charge of 48 nC, enabling fast and efficient switching.

The MOSFET offers low switching and conduction losses for enhanced energy efficiency. Wide temperature tolerance and high power dissipation rating provide reliability in industrial applications. Optimized gate charge characteristics enable fast switching and improved device response.

Package design supports standard through-hole PCB mounting and thermal management. Ensures enhanced performance in power supply and correction circuits.

This Vishay MOSFET is an ideal choice for industrial, telecommunications, manufacturing, and power electronics sectors requiring efficient, high-voltage switching devices. Explore more components in the Power MOSFET category at EnvMart for comprehensive power management solutions.

Vishay EF Series N-Channel Enhancement MOSFET, 19 A Max Drain Current, 600 V Max Drain Source Voltage SIHA22N60EF-GE3
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Frequently Asked Questions

The maximum continuous drain current of this model is 19 A.

This MOSFET has a maximum drain-source voltage rating of 600 V.

It is packaged in a TO-220 form factor and is designed for through-hole mounting.

The operating temperature range for this MOSFET is from -55°C to 150°C.

The maximum power dissipation rating for this model is 33 W.

The typical gate charge at the rated gate-source voltage is 48 nC.

The maximum gate-source voltage supported by this MOSFET is 30 V.

The forward voltage drop is rated at 1.2 V.

This model features an N-Channel enhancement mode operation.

The maximum drain-source resistance for this MOSFET is 0.182 Ω.

Typical applications include server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) power supplies.

The dimensions are 15.3 mm in height, 10.3 mm in length, and 4.7 mm in width.

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