onsemi PowerTrench Type P-Channel MOSFET, 4.4 A, 100 V Enhancement Mode, 8-Pin WDFN FDMC86139P

onsemi FDMC86139P PowerTrench Type P-Channel MOSFET is an advanced semiconductor device optimized for efficient switching applications in industrial and electronic circuits. It supports a maximum continuous drain current of 4.4 amperes with a drain-source voltage rating of 100 volts, making it suitable for various power management and conversion uses.

This MOSFET employs the PowerTrench technology, which provides improved power density and system efficiency. The shielded-gate structure reduces switching losses and achieves a low figure of merit, essential for high-frequency switching environments.

The device comes in an 8-pin WDFN package designed for surface mounting, enabling compact PCB layouts. It features a maximum drain-source resistance of 104 milliohms, which minimizes conduction losses during operation.

Key electrical attributes include a typical gate charge of 16 nanocoulombs and forward voltage of -1.3 volts, supporting synchronous rectification and reducing power dissipation. The MOSFET operates reliably across a broad temperature range from -55°C to 150°C, ensuring durability in harsh industrial conditions.

With maximum power dissipation up to 40 watts, this component is ideal for power supply units, DC/DC converters, motor controllers, and other applications where efficient switching is critical. However, it does not comply with automotive industry standards, limiting usage in automotive-grade systems.

Package dimensions are compact with a 3.3 mm length and width, and a height of 0.725 mm, facilitating dense circuit integration. The device does not include additional recognized certifications or approvals.

The MOSFET features a compact 8-pin WDFN package suitable for surface mounting. It has a low maximum drain-source resistance of 104 milliohms ensuring efficient performance. The typical gate charge is 16 nanocoulombs at rated gate-source voltage for fast switching.

The device supports a wide operating temperature range from minus 55°C to 150°C. Maximum power dissipation is rated at 40 W allowing robust application use. Forward voltage is approximately -1.3 V with a maximum gate source voltage rating of -25 to +25 volts.

Its symmetrical length and width of 3.3 mm with a height of 0.725 mm provide a compact footprint. PowerTrench technology optimizes efficiency and reduces switching losses.

This MOSFET is widely used in industrial electronics, power management circuits, laboratory equipment, and commercial power supplies due to its reliable performance characteristics. For more devices and product selections, continue exploring the Power MOSFET category on EnvMart.