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onsemi N-Channel MOSFET, 40 A, 650 V Enhancement Mode, Surface Mount, 3-Pin TO-263 Package NVB082N65S3F

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onsemi N-Channel MOSFET, 40 A, 650 V Enhancement Mode, Surface Mount, 3-Pin TO-263 Package NVB082N65S3F

Name: onsemi N-Channel MOSFET, 40 A, 650 V Enhancement Mode, Surface Mount, 3-Pin TO-263 Package NVB082N65S3F
Brand: onsemi
SKU: 257963
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.58mm
Length	10.67mm
Model	NVB082N65S3F
Width	9.65mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	82mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	313W
Typical Gate Charge Qg @ Vgs	81nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.3V

Key Features

Supports maximum continuous drain current of 40 amperes.
Maximum drain-source voltage rating of 650 volts.
Enhancement mode channel with low Rds(on) of 82 milliohms.
Maximum power dissipation of 313 watts.
Automotive standard AEC-Q101 compliant.
Compact TO-263 surface mount 3-pin package.
Operating temperature range from -55 to 150 °C.
Ultra-low typical gate charge of 81 nC for efficient switching.

Product Description

onsemi NVB082N65S3F is a high-performance N-Channel MOSFET designed for demanding electronic power applications. It supports a continuous drain current of 40 A and a high drain-source voltage rating of 650 V, making it suitable for a wide range of automotive and industrial use cases.

This MOSFET uses enhancement mode channel technology with an on-resistance Rds(on) of 82 milliohms, offering low conduction losses and efficient operation. Packaged in a TO-263 3-pin surface mount, it provides robust power dissipation capability up to 313 W and can operate over a broad temperature range from -55 °C to 150 °C.

Its ultra-low typical gate charge of 81 nC and forward voltage of 1.3 V allow for rapid switching and reduced power consumption, enhancing system performance and reliability. The device complies with the AEC-Q101 automotive standard, ensuring durability under harsh conditions.

Typical applications include automotive onboard chargers, DC/DC converters for hybrid electric vehicles, and other power management systems requiring compact high voltage MOSFETs with superior switching characteristics.

Maximum continuous drain current of 40 A. Drain-source voltage rating at 650 V. Low electrical resistance at 82 milliohms Rds(on). High power dissipation of 313 watts. Automotive grade AEC-Q101 compliance. Compact TO-263 surface mount 3-pin package.

Wide operating temperature range of -55 °C to 150 °C. Ultra-low gate charge for efficient switching. Maximum gate-source voltage ±30 V.

This device is ideal for high efficiency power systems in automotive and industrial electronics, supporting miniaturization and thermally demanding environments. onsemi MOSFETs like the NVB082N65S3F provide the technology balance for conduction losses, switching performance, and dv/dt robustness, making it a preferred choice for modern power electronics.

Browse the Electronics & Electricals category at EnvMart for a comprehensive selection of semiconductor components including MOSFETs, diodes, transistors, and other discrete semiconductors tailored to industrial applications.