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DiodesZetex N-Channel MOSFET, 360 mA, 50 V Enhancement, 3-Pin SC-70 DMN53D0LW-7

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DiodesZetex N-Channel MOSFET, 360 mA, 50 V Enhancement, 3-Pin SC-70 DMN53D0LW-7

Name: DiodesZetex N-Channel MOSFET, 360 mA, 50 V Enhancement, 3-Pin SC-70 DMN53D0LW-7
Brand: DiodesZetex
SKU: 252310
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	DMN53D0LW-7
Width	1.35mm
Mount Type	Surface
Series	DMN53D0LW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q101, AEC-Q200
Channel Type	N
Maximum Continuous Drain Current Id	360mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	420mW
Typical Gate Charge Qg @ Vgs	1.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.75V

Key Features

Enhancement mode MOSFET suitable for various switching and amplification applications.
Compact SC-70 package with 3 pins for surface mounting on PCBs.
Maximum power dissipation rated at 420 mW allowing efficient thermal management.
Operates within a temperature range from -55°C to 150°C, ensuring reliable performance.
Low gate charge of 1.2 nC enhances switching speed and efficiency.
Robust channel resistance of 3 Ω minimizes power loss during operation.
Complies with automotive standards including AEC-Q100, AEC-Q101, and AEC-Q200 for high reliability.
Forward voltage drop of 0.75 V supports efficient conduction.

Product Description

DiodesZetex DMN53D0LW-7 is an N-Channel Enhancement mode MOSFET designed for efficient and reliable switching applications in electronic circuits. It features a maximum continuous drain current rating of 360 mA and a maximum drain-source voltage of 50 V, making it suitable for low power electronic designs.

Its compact 3-pin SC-70 package supports surface mounting, ideal for space-constrained printed circuit boards in industrial, automotive, and electronic applications. The MOSFET demonstrates excellent thermal characteristics with a maximum power dissipation of 420 mW and wide operating temperature tolerance from -55°C up to 150°C, allowing use in harsh environments.

The device exhibits a low typical gate charge of 1.2 nC at Vgs, enabling fast switching and reduced power loss. Additionally, its maximum drain-source resistance of 3 Ω ensures efficient current flow with minimal conduction loss. The forward voltage is 0.75 V, contributing to overall energy efficiency of the circuit.

This MOSFET complies with automotive industry standards AEC-Q100, AEC-Q101, and AEC-Q200, certifying its suitability for stringent automotive and industrial demands. Its compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height permit compact assembly and integration.

Enhancement mode operation for reliable switching. Compact SC-70 3-pin surface mount package. 360 mA max continuous drain current and 50 V max drain-source voltage. Wide operating temperature range from -55°C to 150°C. Low gate charge of 1.2 nC for efficient switching.

Complies with AEC-Q100, AEC-Q101, and AEC-Q200 standards. Maximum power dissipation of 420 mW supporting thermal stability. 3 Ω maximum drain-source resistance for low conduction losses.

This product is designed for electronic, automotive, and industrial control applications requiring compact and efficient N-channel MOSFET devices. Explore our Semiconductor category for a wide range of advanced discrete semiconductors and MOSFETs at EnvMart.