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Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement Mode, 3-Pin TO-252 IRFR5410TRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR5410TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 205mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 66W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- This MOSFET features an enhancement-mode P-channel channel for efficient switching.
- It offers a low maximum drain-source resistance of 205 milliohms to reduce conduction losses.
- Designed with a surface mount TO-252 package, it is ideal for compact PCB layouts.
- The device operates reliably in temperatures ranging from -55°C to 150°C.
- The typical gate charge is 58 nC at Vgs, facilitating fast switching performance.
- It supports maximum gate-source voltages of ±20 V ensuring robust gate control.
- The MOSFET dissipates up to 66 W of power under maximum conditions.
- The forward voltage is -1.6 V, suitable for various power applications.
Product Description
Infineon IRFR5410TRPBF is a HEXFET Type P-Channel MOSFET designed for high-efficiency power management in electronic circuits, delivering a maximum continuous drain current of 13 A and drain-source voltage of 100 V in a compact TO-252 surface mount package.
This enhancement-mode MOSFET is engineered to minimize conduction losses with a maximum drain-source resistance of 205 milliohms. Its low gate charge of 58 nC enhances switching speed, making it suitable for power regulation and switching applications in industrial, automotive, and commercial electronics.
The robust build supports operating temperatures from -55°C up to 150°C, ensuring durability in harsh environments. The device supports gate-source voltage swings of ±20 V, providing reliable gate control for varied circuit designs.
Physically, the device measures 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, enabling compact circuit board layout and thermal management. Typical forward voltage of -1.6 V supports efficient power control.
Applications include power conversion, motor control, battery management, and general switching where high reliability and performance are critical.
Infineon is recognized for its HEXFET power MOSFET portfolio, offering solutions that enhance energy efficiency and system performance across electronic components and power semiconductors.
This MOSFET features an enhancement-mode P-channel channel for efficient switching. It offers a low maximum drain-source resistance of 205 milliohms to reduce conduction losses. Designed with a surface mount TO-252 package, it is ideal for compact PCB layouts.
The device operates reliably in temperatures ranging from -55°C to 150°C. The typical gate charge is 58 nC at Vgs, facilitating fast switching performance. It supports maximum gate-source voltages of ±20 V ensuring robust gate control.
The MOSFET dissipates up to 66 W of power under maximum conditions. Dimensions include a length of 6.73 mm, width of 6.22 mm, and a height of 2.39 mm. The forward voltage is -1.6 V, suitable for various power applications.
Explore more Infineon MOSFETs and power semiconductor solutions at EnvMart for advanced electronic design and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It can dissipate up to 66 W of power under maximum conditions.
The typical gate charge at Vgs for this unit is 58 nC.
It supports maximum gate-source voltages of ±20 V.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The maximum drain-source resistance is 205 milliohms.
It operates reliably in temperatures ranging from -55°C to 150°C.
The typical forward voltage is -1.6 V.
This model is designed for surface mounting.
It is suitable for power conversion, motor control, battery management, and general switching applications.
It features a P-channel type channel for efficient switching.
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